Formation and Properties of Epitaxial CoSi2 Layers on p-Si0.83Ge0.17/p-Si(001) using a Si Capping Layer by Metal-Organic Chemical Vapor Deposition

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Epitaxial CoSi2 layers were in-situ grown using a sacrificial Si capping layer on p-Si0.83Ge0.17/p-Si(001) by metal organic vapor deposition (MOCVD) at 600°C using cyclopentadienyl cobalt, Co($\eta^{5}$-C5H5)(CO)2. The grown epitaxial CoSi2 layers remain thermally stable at the annealing temperature, $T_{\text{A}}\leq 800$°C. The CoSi2/p-Si0.83Ge0.17/p-Si(001) samples annealed at $T_{\text{A}}\leq 850$°C showed the sheet resistance values as low as ${\cong}5.6$ $\Omega/\square$. At $T_{\text{A}}=900$°C, the observed increase in the sheet resistance value to ${\cong}14.7$ $\Omega/\square$ was attributed to the formation of CoSi phase with higher resistivity resulting from the direct interaction of Co with the SiGe alloy layer. The effective Schottky barrier heights ($\phi_{\text{Bp}}$), measured for the first time, ranged from 0.103 to 0.194 eV at the reverse bias of $-5$–0 V.
2003-06-15