Improvement in Thermal Stability of Chemical Vapor Deposition CoSi2/Polycrystalline Silicon Using TiN and Amorphous Silicon Interlayers
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概要
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The effect of TiN and amorphous silicon (a-Si) interlayers on the thermal stability of a blanket CoSi2 polycrystalline silicon (poly-Si) gate electrode structure has been investigated. CoSi2 was formed by reactive chemical vapor deposition (CVD) using a Co($\eta^{5}$-C5H5)(CO)2 precursor at 650°C. The TiN interlayer effectively suppressed the interdiffusion of the Co and Si atoms between CoSi2 and poly-Si, thus the thermal stability of the structure was improved significantly up to 1000°C. The a-Si interlayer also improved the thermal stability of CoSi2, even though such an improvement is not as great as the effect of the TiN interlayer. We found that the interfacial native oxide between CoSi2 and poly-Si had the same effect as the TiN interlayer in suppressing the interdiffusion of Co and Si atoms.
- 2006-02-15
著者
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Ahn Byung
Department Of Internal Medicine Hepatology Division Kangnam St. Mary's Hospital College Of Medi
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Hong Jeong
Department Of Applied Mathematics Korea Maritime University
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Kim Sun
Department Of Animal Science And Technology Seoul National University
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Ahn Byung
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-gu, Daejon 305-701, Korea
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Hong Jeong
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-gu, Daejon 305-701, Korea
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Lee Heui
Product Development Team, Magna Chip Semiconductor Ltd., 1 Hyanjeong-dong, Heungduk-gu, Cheongju, Chungbuk 361-725, Korea
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Kim Sun
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-gu, Daejon 305-701, Korea
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AHN Byung
Department of Decontamination and Decommissioning, Korea Atomic Energy Research Institute
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