Dry Etching of TaN/HfO2 Gate Stack Structure by Cl2/SF6/Ar Inductively Coupled Plasma
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概要
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The dry etching characteristics of the TaN/HfO2 gate stack structure using Cl2/Ar, Cl2/SF6/Ar and Cl2/SF6/O2/Ar inductively coupled plasmas (ICPs) were investigated and the etch rates of the TaN and HfO2 layers and TaN/HfO2 etch rate selectivities were compared. The results obtained for the TaN/HfO2 etching by varying the Cl2/Ar gas mixing ratio, the top ICP electrode power, and the dc self-bias voltage ($V_{\text{dc}}$) in the Cl2/Ar plasmas showed that low etch selectivities were obtained, due to the high HfO2 etch rate. The effects of adding SF6 to the Cl2/Ar plasmas and adding O2 flow to the SF6/Cl2/Ar chemistry were investigated for the purpose of improving the etch selectivity. Etch experiments performed by varying the Cl2/SF6/Ar gas mixing ratio and $V_{\text{dc}}$ value in SF6/Cl2/Ar plasmas, combined with X-ray photoelectron spectroscopy measurements, showed that the etch rates were reduced compared to those in Cl2/Ar chemistry, due to the heavy fluorination of the surface, however the etch selectivity was increased, due to a disproportionate decrease in the TaN and HfO2 etch rates. The addition of O2 flow to the SF6/Cl2/Ar plasma also increased the etch selectivity at an O2 flow rate of 5 sccm, due to the TaN etch rate being increased, while the HfO2 etch rate remained almost constant.
- 2005-07-15
著者
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Shin Myoung
Department Of Materials Engineering And Center For Advanced Plasma Surface Technolog Sungkyunkwan Un
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Ahn Jinho
School Of Materials Science And Engineering Hanyang University
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Lee Taeho
School Of Materials Science And Engineering Hanyang University
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Lee Nae-eung
Department Of Materials Engineering And Center For Advanced Plasma Surface Technolog Sungkyunkwan Un
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Na Sung-woong
Department Of Materials Engineering And Center For Advanced Plasma Surface Technolog Sungkyunkwan Un
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Kim Jiyoung
Department Of Bioscience And Biotechnology And Bio/molecular Informatics Center Konkuk University
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Oh Tae
Department Of Information Media Engineering Myongji College
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Ahn Jinho
School of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea
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Oh Tae
Department of New Materials Engineering, Kookmin University, Seoul 861-1, Korea
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Lee Nae-Eung
Department of Materials Engineering and Center for Advanced Plasma Surface Technolog, Sungkyunkwan University, Suwon, Kyunggi-do 440-746, Korea
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Shin Myoung
Department of Materials Engineering and Center for Advanced Plasma Surface Technolog, Sungkyunkwan University, Suwon, Kyunggi-do 440-746, Korea
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Lee Taeho
School of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea
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Na Sung-Woong
Department of Materials Engineering and Center for Advanced Plasma Surface Technolog, Sungkyunkwan University, Suwon, Kyunggi-do 440-746, Korea
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Kim Jiyoung
Department of New Materials Engineering, Kookmin University, Seoul 861-1, Korea
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