GaN-Based Light-Emitting Diodes on Micro-Lens Patterned Sapphire Substrate
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概要
- 論文の詳細を見る
GaN-based light-emitting diodes (LEDs) were fabricated on a micro-lens patterned sapphire substrate (ML-PSS). ML patterning on the sapphire substrate was carried out by using photolithography with photo-resist reflow technique and dry etching process using chlorine based inductively coupled plasma. The ML-PSS was prepared using a periodic ML pattern with diameters of 3 μm and spacing of 2, 4, and 5 μm, respectively, on the $c$-plane sapphire substrate. The leakage current of the LEDs fabricated on the ML-PSS greatly decreased compared to that of a conventional LED and it decreases with increasing ML-pattern spacing; it decreases from 1.8 to 0.2 μA at reverse voltage of 15 V as the ML-pattern spacing is increased from 2 to 5 μm. The output power of the LED with 5 μm spacing was about 155% higher than that of a conventional LED and about 10% higher than that of the LED on the PSS with spacing of 2 μm. This improvement of the output power is contributed not only by reduction of dislocation density depending on spacing of patterning but also by the enhancement of light extraction efficiency with outcoupling via the ML patterned facets on sapphire substrate.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-07-25
著者
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Yang Gye
Semiconductor Physics Research Center And Department Of Semiconductor Science And Technology Chonbuk
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Lee Yong
School Of Bioscience And Biotechnology And Institute Of Bioscience And Biotechnology Kangwon Nationa
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Oh Tae
Department Of Information Media Engineering Myongji College
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Kim Tae
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea
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Kim Seung
School of Advanced Materials Engineering, Chonbuk National University, Chonju-si, Chonbuk 561-756, Korea
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Suh Eun-Kyung
Department of Micro and Nanosciences, Aalto University, Micronova, PL 13500, 00076 Aalto, Finland
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Jeong Hyun
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Korea
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Lee Yong
School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju 561-756, Korea
-
Yang Gye
Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Korea
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Kim Tae
School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju 561-756, Korea
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Kim Seung
School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju 561-756, Korea
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Jeong Hyun
School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju 561-756, Korea
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