Complementary Self-Biased Logics Based on Single-Electron Transistor (SET)/CMOS Hybrid Process

スポンサーリンク

概要

• 論文の詳細を見る

• We propose a complementary self-biasing method which enables the single-electron transistor (SET)/complementary metal-oxide semiconductor (CMOS) hybrid multi-valued logics (MVLs) to operate well at high temperatures, where the peak-to-valley current ratio (PVCR) of the Coulomb oscillation markedly decreases. The new architecture is implemented with a few transistors by utilizing the phase control capability of the sidewall depletion gates in dual-gate single-electron transistors (DGSETs). The suggested scheme is evaluated by a SPICE simulation with an analytical DGSET model. Furthermore, we have developed a new process technology for the SET/CMOS hybrid systems. We have confirmed that both of the fabricated devices, namely, SET and CMOS transistors, exhibit the ideal characteristics for the complementary self-biasing scheme: the SET shows clear Coulomb oscillations with a 100 mV period and the CMOS transistors show a high voltage gain.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-04-15

著者

• Lee Jong

  School Of Adv. Mat. Sci. & Eng. Sungkyunkwan Univ.

• Sim Jae

  School Of Electrical Engineering & Inter-university Semiconductor Research Center (isrc) Seoul N

• SONG Ki-Whan

  School of Electrical Engineering, Seoul National University

• YOU Young

  R&D Center, Samsung Electronics Co.

• PARK Joo-On

  R&D Center, Samsung Electronics Co.

• JIN You

  R&D Center, Samsung Electronics Co.

• KIM Young-Wug

  R&D Center, Samsung Electronics Co.

• Kim Kyung

  School Of Food Biotechnology Woosong University

• Lee Yong

  School Of Bioscience And Biotechnology And Institute Of Bioscience And Biotechnology Kangwon Nationa

• Park Byung-gook

  School Of Electrical Engineering And Computer Sciences And The Inter-university Semiconductor Resear

• Lee Yong

  School of Electrical Engineering, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea

• Kim Kyung

  School of Chemical Engineering and Materials Science, Chung-Ang University, 221 Huksuk-dong, Dongjak-gu, Seoul 156-756, Korea

• Park Byung-Gook

  School of Electrical Engineering, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea

• Park Byung-Gook

  School of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Shinlim-Dong, Kwanak-Gu, Seoul 151-742, Korea

• Jin You

  R&D Center, Samsung Electronics Co., San#24, Nongseo-ri, Kiheung-eup, Yongin City, Kyungki-do 449-711, Korea

• You Young

  R&D Center, Samsung Electronics Co., San#24, Nongseo-ri, Kiheung-eup, Yongin City, Kyungki-do 449-711, Korea

• Kim Young-Wug

  R&D Center, Samsung Electronics Co., San#24, Nongseo-ri, Kiheung-eup, Yongin City, Kyungki-do 449-711, Korea

• Park Byung-Gook

  School of EECS and ISRC, Seoul National University, Seoul 151-742, Korea

• Kim Kyung

  School of Electrical Engineering, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea

関連論文

• 2P4-3 横振動により接合された高延性ENIGめっき電極の評価(ポスターセッション)
• Dynamic analysis of bubble-driven liquid flows using time-resolved particle image velocimetry and proper orthogonal decomposition techniques
• Single-Electron MOS Memory with a Defined Quantum Dot Based on Conventional VLSI Technology
• Extraction of Trap Depth in Flash Cell Having Arch-Active Structure
• Spatial Distribution of Channel Thermal Noise in Short-Channel MOSFETs
• Improving the Cell Characteristics Using SiN Liner at Active Edge in 4G NAND Flash
• Establishing read operation bias schemes for 3-D pillar-structure flash memory devices to overcome paired cell interference (PCI) (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Establishing read operation bias schemes for 3-D pillar-structure flash memory devices to overcome paired cell interference (PCI) (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Fuzzy Logic-Based Quantized Event Filter for RFID Data Processing
• Complementary Self-Biased Logics Based on Single-Electron Transistor (SET)/CMOS Hybrid Process
• A Highly Scalable Split-Gate SONOS Flash Memory with Programmable-Pass and Pure-Select Transistors for Sub-90-nm Technology
• Control of the Microstructure of (Pb, La) TiO_3 Thin Films by Metal-Organic Chemical Vapor Deposition Using a Solid Delivery System for Ferroelectric Domain Memory
• Packet Diversity in Wireless Uplink Channels(Wireless Communication Technologies)
• Synchronous Mirror Delay for Multi-phase Locking
• Synchronous Mirror Delay for Multi-phase Locking
• In Vitro Immunoregulatory Effects of Korean Mistletoe Lectin on Functional Activation of Monocytic and Macrophage-Like Cells(Pharmacology)
• Anti-stress and Anti-fatigue Effects of Fermented Rice Bran(Food & Nutrition Science)
• Degradation and Recovery Phenomena of Thin Gate Oxide Films under Dynamic Negative-Bias Temperature Instability (NBTI) Stress (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• Degradation and Recovery Phenomena of Thin Gate Oxide Films under Dynamic Negative-Bias Temperature Instability (NBTI) Stress (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• Preparation of (Ba, Sr)TiO_3 Thin Films with High Pyroelectric Coefficients at Ambient Temperatures
• Investigation of turbulent flows in a waterjet intake duct using stereoscopic PIV measurements
• F207 COMPARATIVE STUDY ON THE NEAR WAKE OF A CIRCULAR CYLINDER : PIV, LES AND DNS(Complex turbulent flows)
• D212 EVOLUTION OF THE COUNTER-ROTATING VORTEX STRUCTURE IN A CROSSFLOW JET(Ventilation/vortex flow measurement)
• Dye-sensitized Solar Cells with Halide-bridged Mixed-valence Cu(I)-Cu(II) Coordination Polymers with Hexamethylenedithiocarbamate Ligand
• Isolation of 151 Mutants that Have Developmental Defects from T-DNA Tagging
• A301 EFFECT OF TRANSVERSE CONVEX CURVATURE ON THE ONSET OF NUCLEATE BOILING IN CONCENTRIC ANNULI : EXPERIMENTS(Subcooled boiling)
• Anomalous Noise Degradation Caused by Device Size Effects in SOI MOSFETs
• Thermal maturity assessment of the Upper Triassic to Lower Jurassic Nampo Group, mid-west Korea : Reconstruction of thermal history
• On the Bit Error Probability of 16DAPSK in a Frequency-Selective Fast Rayleigh Fading Channel with Cochannel Interference
• Active Channel Reservation for Coexistence Mechanism (ACROS) for IEEE 802.15.4 and IEEE 802.11
• Dependence of Contact Resistance on Substrate Doping and Impact of Mixed Ion Implantation
• Lateral Silicon Field-Emission Devices using EIectron Beam Lithography
• Evolution of the Counter-Rotating Vortex Structure in a Crossflow Jet
• Monte Carlo Simulation of Single-Electron Nanocrystal Memories
• Optical Characteristics of InAs/InGaAsP/InP Self-Assembled Quantum Dots Emitting at 1.4-1.6μm
• Physical Register Sharing through Value Similarity Detection(Computer Systems)
• 516 A Study on Fabrication of PDP Barrier Ribs Using Micro Tooling Process
• Non-Quasi-Static Small-Signal Model of RF MOSFETs Valid up to 110GHz
• Low power pixel-level ADC for a micro-bolometer(Session9A: Silicon Devices IV)
• Low power pixel-level ADC for a micro-bolometer(Session9A: Silicon Devices IV)
• CARS temperature measurement in a Liquid Kerosene fueled Gas Turbine Combustor Sector Rigs(Measurement, Temperature)
• Sandstone diagenesis of the Lower Cretaceous Sindong Group, Gyeongsang Basin, southeastern Korea : Implications for compositional and paleoenvironmental controls
• 4-bit FinFET SONOS flash memory: Optimization of structure and 3D numerical simulation (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• 4-bit FinFET SONOS flash memory: Optimization of structure and 3D numerical simulation (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Non-Quasi-Static Modeling of Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor and Its Model Verification up to 1 THz
• Improved Strain-Free GaN Growth with a Nearly Lattice-Matched AlInN Interlayer by Metalorganic Chemical Vapor Deposition
• Enhanced Light Extraction in GaN-Based Light-Emitting Diodes with Holographically Fabricated Concave Hemisphere-Shaped Patterning on Indium–Tin-Oxide Layer
• An advanced method for the determination of carboxyl methyl esterase activity using gas chromatography-chemical ionization-mass spectrometry
• The light extraction efficiency of p-GaN patterned InGaN/GaN light-emitting diodes fabricated by size-controllable nanosphere lithography
• Early cretaceous paleogeography of Korea and Southwest Japan inferred from occurrence of detrital chromian spinels
• Development of Counter-Rotating Vortex Pair in a Crossflow Jet
• Extraction of Vertical, Lateral Locations and Energies of Hot-Electrons-Induced Traps through the Random Telegraph Noise
• InGaN/GaN Light-Emitting Diode on Concave-Hexagonal-Patterned Sapphire Substrate
• Optical Transition of Eu3+ Ions in YMg2Al3B6O17
• Paleozoic sedimentation and tectonics in Korea : A review
• Measurement of dissolved oxygen concentration field in a microchannel using PtOEP/PS film
• Study on the Valence State of Eu Ions in Sr3Al2O6:Eu Phosphor
• Improving the Cell Characteristics Using SiN Liner at Active Edge in 4 Gbits NAND Flash Memories
• Synthesis and Conducting Properties of a New Mixed-valence Cu(I)-Cu(II) 1-D Coordination Polymer Bridged by Morpholine Dithiocarbamate
• Optical Properties of Blue-Light-Emitting (Ca,Sr)Mg2Si3O9:Eu2+ Phosphor
• A New 1T DRAM Cell : Cone Type 1T DRAM Cell
• Paleogeographic reconstructions of the East Asia continental margin during the middle to late Mesozoic
• Laser-Assisted Control of Electrical Oscillation in VO Thin Films Grown by Pulsed Laser Deposition
• Structural Investigation of Hybrid Organic Photovoltaic Devices with Single-Walled Carbon Nanotubes
• Anti-tumor Activity of the Novel Hexahydrocannabinol Analog LYR-8 in Human Colorectal Tumor Xenograft Is Mediated through the Inhibition of Akt and Hypoxia-Inducible Factor-1α Activation
• Extraction Method for Substrate-Related Components of Vertical Junctionless Silicon Nanowire Field-Effect Transistors and Its Verification on Radio Frequency Characteristics
• Highly-Sensitive and -Linear Cryogenic Temperature Response of Long-Period Fiber Gratings Written on B--Ge-Codoped Photosensitive Fiber
• Geranyl Derivative of Phloroacetophenone Induces Cancer Cell-Specific Apoptosis through Bax-Mediated Mitochondrial Pathway in MCF-7 Human Breast Cancer Cells
• Design and Characterization of Plasmonic Terahertz Wave Detectors Based on Silicon Field-Effect Transistors
• Current-Controlled Tunable Fiber Multiwavelength Filter Based on Polarization-Diversity Loop Structure
• Direct Current Voltage Bias Effect on Laser-Induced Switching Bistability in VO_2-Based Device
• Complementary Self-Biased Logics Based on Single-Electron Transistor (SET)/CMOS Hybrid Process
• Monte Carlo Simulation of Single-Electron Nanocrystal Memories
• Highly Manufacturable and Reliable 80-nm Gate Twin Silicon–Oxide–Nitride–Oxide–Silicon Memory Transistor
• GaN-Based Light-Emitting Diodes on Micro-Lens Patterned Sapphire Substrate
• Novel Extraction Method for Source and Drain Series Resistances in Silicon Nanowire Metal--Oxide--Semiconductor Field-Effect-Transistors Based on Radio-Frequency Analysis
• Characterization of Random Telegraph Noise Generated by Process- and Cycling-Stress-Induced Traps in 26 nm NAND Flash Memory
• Characterization of Sensitivity and Resolution of Silicon Resistive Probe
• Body Doping Profile of Select Device to Minimize Program Disturbance in Three-Dimensional Stack NAND Flash Memory
• Temperature-Insensitive Polarimetric Fiber Strain Sensor with Short Polarization-Maintaining Photonic Crystal Fiber
• Body Doping Profile of Select Device to Minimize Program Disturbance in Three-Dimensional Stack NAND Flash Memory (Special Issue : Microprocesses and Nanotechnology)
• Waveband Switching in a Fiber Ring Laser Incorporating a Polarization-Independent Interleaving Filter Based on a Polarization-Diversity Loop Structure
• Investigation of source-to-drain capacitance by DIBL effect of silicon nanowire MOSFETs

もっと見る 閉じる

スポンサーリンク