InGaN/GaN Light-Emitting Diode on Concave-Hexagonal-Patterned Sapphire Substrate
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概要
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We describe an effective method for obtaining GaN-based light-emitting diodes (LEDs) with a high light output power using concave-hexagonal-patterned sapphire substrates (CH-PSSs) without a $c$-plane region that have been wet etched using a H2SO4:H3PO4 mixture solution. Adopting the CH-PSSs in LEDs could improve internal quantum efficiency by reducing the etch pit density and could also increase the extraction quantum efficiency because manner by which the inclined etch facets focus and diffract light at the concave-hexagonal pattern. At an injection current of 20 mA, the light output power of the CH-PSS LED was 2.5 times higher than that of conventional LEDs.
- 2009-11-25
著者
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Suh Eun-kyung
School Of Semiconductor And Chemical Engineering Semiconductor Physics Research Center Chonbuk Natio
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Kim Hyun
School Of Civil Environmental And Architectural Engineering Korea University
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Kim Hyung
School Of Biomedical Engineering College Of Biomedical And Health Science Research Institute Of Biom
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Lee Yong
School Of Bioscience And Biotechnology And Institute Of Bioscience And Biotechnology Kangwon Nationa
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Kim Hee
School Of Animal Bioscience & Technology Konkuk University
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Kang Ji
School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Korea
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Ryu Jae
School of Semiconductor and Chemical Engineering, Chonbuk National University, Chonju 561-756, Korea
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Hong Chang-Hee
School of Semiconductor and Chemical Engineering and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
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Hong Chang-Hee
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756, Republic of Korea
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Han Nam
School of Semiconductor and Chemical Engineering and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
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Han Nam
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756, Republic of Korea
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Suh Eun-Kyung
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756, Republic of Korea
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Kang Ji
School of Semiconductor and Chemical Engineering and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
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Kang Ji
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756, Republic of Korea
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Kim Hyung
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756, Republic of Korea
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Kim Hyun
School of Advanced Materials Science and Engineering, Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon, Kyunggi-do 440-746, Republic of Korea
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Lee Yong
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756, Republic of Korea
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Kim Hee
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756, Republic of Korea
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Ryu Jae
School of Semiconductor and Chemical Engineering and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
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Ryu Jae
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756, Republic of Korea
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Kim Hyun
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756, Republic of Korea
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