Approaches to Decreasing the Processing Temperature for a Solution-Processed InZnO Thin-Film Transistors
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概要
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In this paper, the formation of a dual active layer (DAL) and utilization of a nitrate precursor are proposed to decrease the processing temperature for solution-processed thin-film transistors (TFTs). In the DAL approach, the conductivity decline of a conventional solution-processed AlInZnO (AIZO) was complemented by stacking a highly conductive InZnO (IZO) layer at the bottom of the DAL structure. Further decrease in processing temperature was achieved for the IZO TFT with a zinc nitrate precursor, which showed a weaker decomposition behavior than Zn acetate. Using DAL and the nitrate precursor, TFTs with field-effect mobilities of 2.89 (fabricated at 350 °C) and 0.21 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup>(fabricated at 250 °C) were achieved, respectively.
- 2013-03-25
著者
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Kim Dong
School Of Electrical And Electronic Engineering At Yonsei University
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Kim Hyun
School of Advanced Materials Science and Engineering, Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon, Kyunggi-do 440-746, Republic of Korea
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Jeong Woong
School of Electrical and Electronic Engineering, Yonsei University, 262 Seongsanno, Seodaemoon-gu, Seoul 120-749, Korea
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Kim Dong
School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Republic of Korea
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