Analytic Model for the Gate Current of MODFET's with and without Photonic Control
スポンサーリンク
概要
- 論文の詳細を見る
Understanding physical mechanisms of photonic response in microwave devices such as MODEFT's is important in implementing high speed radio-on-fiber systems. We considered the gate current path as two Schottky diodes connected back-to-back where the gate metal plate and the barrier semiconductor layer constitutes the first Schottky diode and the barrier semiconductor layer and the two-dimensional electron (hole) gas formed in the channel constitutes the second Schottky diode. An analytic expression for the gate current in terms of the barrier heights of the two Schottky diodes is derived. When the photonic illumination generates the photocarries in the channel, the barrier heights are modified via the change in the Fermi level. This also explains the shift of the threshold voltage with the photonic illumination. The result shows rather linear relation between the gate current and the photonic illumination intensity under certain conditions.
- 社団法人電子情報通信学会の論文
- 2002-06-25
著者
-
Kim Dong
School Of Electrical And Electronic Engineering Chung-ang Univ.
-
Zimmermann Jacques
Imep Cnrs_inpg
-
HAN Ilki
Nano Device Research Center, Korea Institute of Science and Technology
-
Lee Jungil
Nano Device Research Center, Korea Institute of Science and Technology
-
Choi Won-june
Nano Device Research Center Kist
-
Kim D
School Of Electrical Engineering Kookmin University
-
Han Ilki
Nano Device Research Center Kist
-
Kim Dong
Department Of Electronics Engineering Kookmin University
-
Lee Jungil
Nano Device Research Center Kist
-
Kim Dong
School Of Electrical And Electronic Engineering At Yonsei University
-
KIM Hwe-Jong
Nano Device research Center, KIST
-
ZIMMERMANN Jacques
IMEP, CNRS_INPG
-
Kim Hwe-jong
Nano Device Research Center Kist
-
Han Ilki
School of Electrical Engineering, Kookmin University
関連論文
- A Synchronization and Cell Searching Technique Using Pilot Tones for OFDM Cellular Systems(Wireless Communication Technologies)
- A Synchronization Technique for OFDM Systems with Smart Antenna (日韓合同ワークショップ 1st Korea-Japan Joint Workshop on Ubiquitous Computing and Networking Systems (ubiCNS 2005))
- On the Performance of the Two-Cell Cooperative Single User (CSU) MIMO System with Hybrid Feedback
- Joint subchannel matching and power allocation for the MIMO broadcast relay channel
- Structural and electrical properties of Mg_2TiO_4
- Pre-Processed Recursive Lattice Reduction for Complexity Reduction in Spatially and Temporally Correlated MIMO Channels
- Calibration, Prediction and Process Monitoring Model Based on Factor Analysis for Incomplete Process Data
- Self-Assembled Quantum Dots : Physics and Device Appications(Session A10 Nano-Materials and Quantum Devices)(2004 Asia-Pasific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Self-Assemble Quantum Dots : Physics and Device Appications(Session A10 Nano-Materials and Quantum Devices)(2004 Asia-Pasific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Self-Assembled Quantum Dots : Physics and Device Appications
- Self-Assembled Quantum Dots : Physics and Device Appications
- A Closed Form Solution for the Sum Rate of Multiple Random Beamforming
- Downlink Beamforming Throughput Maximization for Multi-Cell Environment in the Presence of the Channel Uncertainty
- Analytic Model for the Gate Current of MODFET's with and without Photonic Control
- Analytic Model for the Gate Current of MODFET's with and without Photonic Control
- ED2000-83 / SDM2000-83 1/f noise in Schottky barrier structue
- ED2000-65 / SDM2000-65 Optical control of p-channel MODFET
- Low-frequency noise characterizations of back-gate ZnO nanorod field-effect transistor structure (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Low-frequency noise characterizations of back-gate ZnO nanorod field-effect transistor structure (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Effects of Light on a P-Channel InGaP/GaAs/InGaAs Double Heterojunction Pseudomorphic Modulation-Doped Field Effect Transistor
- 1/f Noise in Large Grain Poly-Si TFT's (Devices:先端デバイスの基礎と応用に関するアジアワークショップ)
- 1/f Noise in Large Grain Poly-Si TFT's (Devices:先端デバイスの基礎と応用に関するアジアワークショップ)
- Characteristics of InGaAsP/InGaAs MQW-LD with Asymmetric Separate Confinement Heterostructure(Session A5 Compound Semiconductor Devices II)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Characteristics of InGaAsP/InGaAs MQW-LD with Asymmetric Separate Confinement Heterostructure(Session A5 Compound Semiconductor Devices II)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Characteristics of InGaAsP/InGaAs MQW-LD with Asymmetric Separate Confinement Heterostructure
- Low Frequency Excess Noise Modeling in Semiconductor Heterostructure Devices
- Low Frequency Excess Noise Modeling in Semiconductor Heterostructure Devices
- Row-by-Row Dynamic Source-Line Voltage Control (RRDSV) Scheme for Two Orders of Magnitude Leakage Current Reduction of Sub-1-V-V_SRAM's(Electronic Circuits)
- Observation of Resonance by Individual Energy Lavels in InGaAs/AlAs Triple-Barrier Resonant Tunneling Diodes
- AC Stress-Induced Degradation of Amorphous InGaZnO Thin Film Transistor Inverter
- On the Performance of the Two-Cell Cooperative Single User (CSU) MIMO System with Hybrid Feedback
- Weighted Sum-MSE Minimization for the Multiuser MIMO Relay System
- Speech Enhancement Based on Adaptive Noise Power Estimation Using Spectral Difference
- Origin of Device Performance Degradation in InGaZnO Thin-Film Transistors after Crystallization
- Approaches to Decreasing the Processing Temperature for a Solution-Processed InZnO Thin-Film Transistors