Low-frequency noise characterizations of back-gate ZnO nanorod field-effect transistor structure (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
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概要
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We report the results of low-frequency noise characterizations of back-gate n-channel ZnO nanorod field-effect transistor (FET) structure at room temperature. The noise in source-drain current was measured at zero gate bias and different source-drain biases. The power spectral density of noise current showed 1/f behavior superposed with generation-recombination noise. The corner frequency of the generation-recombination noise component varied with the source-drain bias. The power index of current dependence of the noise density at 10 Hz was, about 1.5. The Hooge parameter obtained from the noise density at 10 Hz was comparable to or smaller than carbon nanotube transistors and much higher than those of silicon nanowires and conventional silicon transistors, indicating special attention should be addressed in device applications. Possible noise sources will be discussed with different models.
- 社団法人電子情報通信学会の論文
- 2007-06-18
著者
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Lee Chul
National Cri Center For Semiconductor Nanorods And Department Of Materials Science And Engineering P
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Ghibaudo Gerard
Imep Minatec-inpg
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Lee Jungil
Nano Device Research Center, Korea Institute of Science and Technology
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Yi Gyu-chul
National Cri Center For Semiconductor Nanorods And Department Of Materials Science And Engineering P
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Yi Gyu-chul
National Cri Center For Semiconductor Nanorods And Department Of Materials Science And Engineering
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Yu Byung-yong
Division Of Materials Research Korea Institute Of Science And Technology
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Lee Jungil
Nano Device Research Center Kist
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Kim Gyu-tae
School Of Electrical Engineering Korea University
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GHIBAUDO Gerard
IMEP, Minatec-INPG
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Ghibaudo Gerard
IMEP, 23 rue des Martyrs, 38000 Grenoble, France
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