Smart Gas Sensor and Noise Properties of Single ZnO Nanowire
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概要
- 論文の詳細を見る
A new zinc oxide nanowire (NW) gas sensor based on the commercially available 0.35 μm complementary metal–oxide–semiconductor (CMOS) process is developed. The smart gas sensor consists of a gas-sensing resistor and an interface circuit for resistance measurement. The single ZnO NW synthesized by the vapor–liquid–solid (VLS) process is utilized as the gas-sensing resistor. The interface circuit for the resistance measurement of the single ZnO NW is composed of a ring oscillator circuit, in which the oscillation period is optimized with regards to the ZnO NW resistance and external capacitance to accurately detect the resistance of the ZnO NW after exposure to the gas. Because the low-frequency noise contains information about the charge fluctuations which are important for determining the gas-sensing reliability, the low-frequency noise of the single ZnO NW at various gate voltages, source–drain voltages and resistances is systematically characterized and compared with those of CMOS field-effect transistors (FETs) and network carbon nanotubes (CNTs) resistor.
- 2009-06-25
著者
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Kim Gyu-tae
School Of Electrical Engineering Korea University
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Yee Seong-Min
School of Electrical Engineering, Korea University, Anam, Seongbuk, Seoul 136-701, Korea
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Choi Jae-Wan
School of Electrical Engineering, Korea University, Anam, Seongbuk, Seoul 136-701, Korea
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Kim Gyu-Tae
School of Electrical Engineering, Korea University, Anam, Seongbuk, Seoul 136-701, Korea
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Choi Soo-Han
CAE Team, Semiconductor R&D Center, Samsung Electronics, San #16, Banwol-dong, Hwasung, Gyeonggi-do 445-701, Korea
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Cho Young-Seung
Technology Development Team, Semiconductor R&D Center, Samsung Electronics, San #16, Banwol-dong, Hwasung, Gyeonggi-do 445-701, Korea
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Ji Hyun-Jin
School of Electrical Engineering, Korea University, Anam, Seongbuk, Seoul 136-701, Korea
関連論文
- Low-frequency noise characterizations of back-gate ZnO nanorod field-effect transistor structure (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Low-frequency noise characterizations of back-gate ZnO nanorod field-effect transistor structure (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Smart Gas Sensor and Noise Properties of Single ZnO Nanowire