Evaluating the Quantum Confinement Effect of Isolated ZnO Nanorod Single-Quantum-Well Structures Using Near-Field Ultraviolet Photoluminescence Spectroscopy
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概要
- 論文の詳細を見る
- 2006-08-01
著者
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An Sung
National Cri Center For Semiconductor Nanorods And Department Of Materials Science And Engineering P
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Yi Gyu-chul
National Cri Center For Semiconductor Nanorods And Department Of Materials Science And Engineering
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Yi Gyu-chul
National Cri Center For Semiconductor Nanorods And Department Of Materials Science And Engineering P
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Yatsui Takashi
Solution-oriented Research For Science And Technology (sorst) Japan Science And Technology Agency
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OHTSU Motoich
Solution-Oriented Research for Science and Technology (SORST), Japan Science and Technology Agency
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YOO Jinkyoung
National CRI Center for Semiconductor Nanorods and Department of Materials Science and Engineering,
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Yoo Jinkyoung
National Cri Center For Semiconductor Nanorods And Department Of Materials Science And Engineering P
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Ohtsu Motoich
Solution-oriented Research For Science And Technology (sorst) Japan Science And Technology Agency
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- Low-frequency noise characterizations of back-gate ZnO nanorod field-effect transistor structure (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Near-Field Evaluation of a Quantum Size Effect in Self-Aligned GaN Whiskers Fabricated Using Photochemical Etching
- ZnO nanorods for electronic nanodevice applications
- Evaluating the Quantum Confinement Effect of Isolated ZnO Nanorod Single-Quantum-Well Structures Using Near-Field Ultraviolet Photoluminescence Spectroscopy