Characteristics of InGaAsP/InGaAs MQW-LD with Asymmetric Separate Confinement Heterostructure(Session A5 Compound Semiconductor Devices II)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
スポンサーリンク
概要
- 論文の詳細を見る
We report the improvement of optical performance of InGaAsP/GaAs 1.55 μm multi-quantum well (MQW) laser diode (LD) systems utilizing asymmetric SCH layer. Additional 100 nm InGaAsP layer in n-type SCH region shifted the field distribution from p-side to intrinsic and n-side resulting in almost half of the threshold current density and internal loss compared to those of the same laser diode system with symmetric SCH structure.
- 社団法人電子情報通信学会の論文
- 2004-06-24
著者
-
Heo Duchang
Nano Device Research Center Kist
-
HAN Ilki
Nano Device Research Center, Korea Institute of Science and Technology
-
Lee Jungil
Nano Device Research Center, Korea Institute of Science and Technology
-
Han Ilki
Nano Device Research Center Kist
-
Lee Jungil
Korea Institute Of Science And Technology Nano Device Research Center
-
Lee Jungil
Nano Device Research Center Kist
関連論文
- Self-Assembled Quantum Dots : Physics and Device Appications(Session A10 Nano-Materials and Quantum Devices)(2004 Asia-Pasific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Self-Assemble Quantum Dots : Physics and Device Appications(Session A10 Nano-Materials and Quantum Devices)(2004 Asia-Pasific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Self-Assembled Quantum Dots : Physics and Device Appications
- Self-Assembled Quantum Dots : Physics and Device Appications
- Analytic Model for the Gate Current of MODFET's with and without Photonic Control
- Analytic Model for the Gate Current of MODFET's with and without Photonic Control
- Low-frequency noise characterizations of back-gate ZnO nanorod field-effect transistor structure (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Low-frequency noise characterizations of back-gate ZnO nanorod field-effect transistor structure (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- 1/f Noise in Large Grain Poly-Si TFT's (Devices:先端デバイスの基礎と応用に関するアジアワークショップ)
- 1/f Noise in Large Grain Poly-Si TFT's (Devices:先端デバイスの基礎と応用に関するアジアワークショップ)
- Characteristics of InGaAsP/InGaAs MQW-LD with Asymmetric Separate Confinement Heterostructure(Session A5 Compound Semiconductor Devices II)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Characteristics of InGaAsP/InGaAs MQW-LD with Asymmetric Separate Confinement Heterostructure(Session A5 Compound Semiconductor Devices II)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Characteristics of InGaAsP/InGaAs MQW-LD with Asymmetric Separate Confinement Heterostructure
- Low Frequency Excess Noise Modeling in Semiconductor Heterostructure Devices
- Low Frequency Excess Noise Modeling in Semiconductor Heterostructure Devices
- Enhanced characteristics of In0.5Ga0.5As quantum dot infrared photo detector with hydrogen plasma treatment (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Enhanced characteristics of In0.5Ga0.5As quantum dot infrared photo detector with hydrogen plasma treatment (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- FatBaby: Multi-functional Rapid Prototyper for IP-based System Designs
- FatBaby: Multi-functional Rapid Prototyper for IP-based System Designs
- FatBaby: Multi-functional Rapid Prototyper for IP-based System Designs