Enhanced characteristics of In0.5Ga0.5As quantum dot infrared photo detector with hydrogen plasma treatment (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
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概要
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Device characteristics of In_<0.5Ga_<0.5>As/GaAs quantum dot infrared detector (QDIP) have been enhanced with hydrogen plasma treatment. After the hydrogen (H) plasma treatment, the dark currents were noticeably decreased and photoluminescence (PL) intensity was increased by H-passivation of interfacial traps between quantum dots and GaAs and of non-radiative defect centers caused during QD growths. Photo response, which could not be observed in as-grown QDIP due to a large dark currents which obscured the photocurrent signal, was measured successfully after H-treatment due to H-passivation.
- 社団法人電子情報通信学会の論文
- 2007-06-18
著者
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Lee Jungil
Korea Institute Of Science And Technology Nano Device Research Center
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Choi Wonjun
Korea Institute Of Science And Technology Nano Device Research Center
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Song Jindong
Korea Institute Of Science And Technology Nano Device Research Center
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HWAGN Sungho
Korea Institute of Science and Technology, Nano Device Research Center
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Hwagn Sungho
Korea Institute Of Science And Technology Nano Device Research Center:r&d Samsung Electronics
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