Analytical Compact Model for Quantization in Undoped Double-Gate Metal Oxide Semiconductor Field Effect Transistors and Its Impact on Quasi-Ballistic Current

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概要

• 論文の詳細を見る

• In this paper we present an original analytical model for quantization in undoped double-gate metal oxide semiconductor field effect transistors (MOSFET). This analytical evaluation of energy levels replaces advantageously usual time-consuming Poisson–Schrödinger numerical simulations. This model, based on an improvement in the standard quantum perturbation theory, exploits efficiently the symmetry of the structure and allows a very good estimation of quantum mechanical effects. This has been successfully validated by comparison with Poisson–Schrödinger simulations (few percents of discrepancy) from node HP 90 to node HP 22 of the 2003 ITRS roadmap. Following Lundstrom's approach, the impact of quantization on quasi-ballistic current has also been investigated. This model has been used for the evaluation of the quasi-ballistic current along the ITRS roadmap, showing a significant increase in drain current compared with the ITRS drift-diffusion-based predictions (except for node 22 nm, where the "ballistic enhancement factor" has been taken equal to 1.2 in ITRS estimations).

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-04-30

著者

• Skotnicki Thomas

  Stmicroelectronics

• Boeuf Frederic

  Stmicroelectronics

• Ghibaudo Gerard

  IMEP, 23 rue des Martyrs, 38000 Grenoble, France

• Clerc Raphael

  IMEP, 23 rue des Martyrs, 38000 Grenoble, France

• Ferrier Marlene

  IMEP, 23 rue des Martyrs, 38000 Grenoble, France

• Pananakakis Georges

  IMEP, 23 rue des Martyrs, 38000 Grenoble, France

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• Analytical Compact Model for Quantization in Undoped Double-Gate Metal Oxide Semiconductor Field Effect Transistors and Its Impact on Quasi-Ballistic Current

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