Boeuf Frederic | Stmicroelectronics

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著作論文

Improvement of Bulk CMOS Electrostatic Integrity using Germanium and Carbon co-implantation
Is a "Power Optimized" Roadmap Realistic for High Performance Applications?
Non Resonant Response to Terahertz Radiation by Submicron CMOS Transistors(THz Devices,Heterostructure Microelectronics with TWHM2005)
Analytical Model for Phonon-Limited Mobility in n-MOS Inversion Layers on Arbitrarily Oriented and Strained Si Surfaces
Using Model for Assessment of Complementary Metal Oxide Semiconductor Technology and Roadmaps as a Pre-Simulation Program with Integrated Circuit Emphasis Model Generator for Early Technology and Circuit Simulation
Analytical Compact Model for Quantization in Undoped Double-Gate Metal Oxide Semiconductor Field Effect Transistors and Its Impact on Quasi-Ballistic Current

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