Analytical Model for Phonon-Limited Mobility in n-MOS Inversion Layers on Arbitrarily Oriented and Strained Si Surfaces

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概要

• 論文の詳細を見る
• 2006-09-13

著者

• Skotnicki Thomas

  Stmicroelectronics

• Boeuf Frederic

  Stmicroelectronics

• Payet Fabrice

  Stmicroelectronics

• SZCZAP Melanie

  L2MP

• CAVASSILAS Nicolas

  L2MP

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• Analytical Model for Phonon-Limited Mobility in n-MOS Inversion Layers on Arbitrarily Oriented and Strained Si Surfaces
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