Improvement of Bulk CMOS Electrostatic Integrity using Germanium and Carbon co-implantation

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概要

• 論文の詳細を見る
• 2006-09-13

著者

• Skotnicki Thomas

  Stmicroelectronics

• Boeuf Frederic

  Stmicroelectronics

• Pouydebasque Arnaud

  Philips Semiconductors

• DUMONT Benjamin

  STMicroelectronics

• MILESI Frederic

  Ion Beam Services, ZI Peynier-Rousset, rue Gaston Imbert prolongee

• SOUIFI Kader

  LPM-INSA de Lyon

• Milesi Frederic

  Ion Beam Services Zi Peynier-rousset Rue Gaston Imbert Prolongee

関連論文

• Improvement of Bulk CMOS Electrostatic Integrity using Germanium and Carbon co-implantation
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• Using Model for Assessment of Complementary Metal Oxide Semiconductor Technology and Roadmaps as a Pre-Simulation Program with Integrated Circuit Emphasis Model Generator for Early Technology and Circuit Simulation
• Analytical Compact Model for Quantization in Undoped Double-Gate Metal Oxide Semiconductor Field Effect Transistors and Its Impact on Quasi-Ballistic Current

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