Non Resonant Response to Terahertz Radiation by Submicron CMOS Transistors(THz Devices,<Special Section>Heterostructure Microelectronics with TWHM2005)

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概要

• 論文の詳細を見る

• Experimental investigations on detection of terahertz radiation are presented. We used plasma wave instability phenomenon in nanometer Silicon field effect transistor. A 30nm gate length transistor was illuminated by THz radiation at room temperature. We observe a maximum signal near to the threshold voltage. This result clearly demonstrates the possibility of plasma wave THz operation of these nanometer scale devices. The response was attributed to a non resonant detection. We also demonstrate the possibility to observe a resonant detection on the same devices.

• 社団法人電子情報通信学会の論文
• 2006-07-01

著者

• Skotnicki Thomas

  Stmicroelectronics

• Boeuf Frederic

  Stmicroelectronics

• Meziani Yahya

  Riec Tohoku University:groupe D'etude Des Semiconducteurs Universite Montpellier 2

• Knap Wojciech

  Ges-umr 5650 Cnrs Universite Montpellier 2

• MEZIANI Yahya

  RIEC, Tohoku University

• LUSAKOWSKI Jerzy

  Groupe d'Etude des Semiconducteurs, Universite Montpellier 2

• DYAKONOVA Nina

  Groupe d'Etude des Semiconducteurs, Universite Montpellier 2

• KNAP Wojciech

  Groupe d'Etude des Semiconducteurs, Universite Montpellier 2

• SELIUTA Dalius

  Semiconductor Physics Institute

• SIRMULIS Edmundas

  Semiconductor Physics Institute

• DEVENSON Jan

  Semiconductor Physics Institute

• VALUSIS Gintaras

  Semiconductor Physics Institute

• Lusakowski Jerzy

  Ges-umr 5650 Cnrs Universite Montpellier 2:institute Of Experimental Physics Warsaw University

• DYAKONOVA Nina

  GES-UMR 5650 CNRS, Universite Montpellier 2

• Dyakonova Nina

  Ges-umr 5650 Cnrs Universite Montpellier 2

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