Terahertz Emission and Detection by Plasma Waves in Nanometer Size Field Effect Transistors(Emerging Device Technologies,<Special Section>Heterostructure Microelectronics with TWHM2005)

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概要

• 論文の詳細を見る

• Plasma oscillations in nanometer field effect transistors are used for detection and generation of electromagnetic radiation of THz frequency. Following first observations of resonant detection in 150nm gate length GaAs HEMT, we describe recent observations of room temperature detection in nanometer Si MOSFETs, resonant detection in GaN/AlGaN HEMTs and improvement of room temperature detection in GaAs HEMTs due to the drain current. Experiments on spectrally resolved THz emission are described that involve room and liquid helium temperature emission from nanometer GalnAs and GaN HEMTs.

• 社団法人電子情報通信学会の論文
• 2006-07-01

著者

• Knap Wojciech

  Ges-umr 5650 Cnrs Universite Montpellier 2

• Lusakowski Jerzy

  Ges-umr 5650 Cnrs Universite Montpellier 2:institute Of Experimental Physics Warsaw University

• TEPPE Frederic

  GES-UMR 5650 CNRS, Universite Montpellier 2

• DYAKONOVA Nina

  GES-UMR 5650 CNRS, Universite Montpellier 2

• FATIMY Abdelouahad

  GES-UMR 5650 CNRS, Universite Montpellier 2

• Teppe Frederic

  Ges-umr 5650 Cnrs Universite Montpellier 2:rensselaer Polytechnic Institute

• Dyakonova Nina

  Ges-umr 5650 Cnrs Universite Montpellier 2

• Fatimy Abdelouahad

  Ges-umr 5650 Cnrs Universite Montpellier 2

関連論文

• Non Resonant Response to Terahertz Radiation by Submicron CMOS Transistors(THz Devices,Heterostructure Microelectronics with TWHM2005)
• Terahertz Emission and Detection by Plasma Waves in Nanometer Size Field Effect Transistors(Emerging Device Technologies,Heterostructure Microelectronics with TWHM2005)

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