AC Stress-Induced Degradation of Amorphous InGaZnO Thin Film Transistor Inverter

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概要

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• The degradation of amorphous indium--gallium--zinc--oxide (a-IGZO) thin film transistor (TFT) inverter operation is investigated under AC pulse stresses. From the extraction of subgap density of states (DOSs), the dominant mechanism of the pulse stress-induced degradation of driver TFT is considered as the increase of acceptor-like deep states, while that of the load TFT is attributed to the increased number of electrons trapped into the interface and/or a-IGZO thin films. We also observe that the rising and falling time of the induced pulse affects each TFT of the inverter in a different manner, and discuss the related mechanism of this phenomenon.

• 2011-09-25

著者

• Kwon Hyuck-in

  School Of Eecs Kyungpook National University

• Kim Dong

  School Of Electrical And Electronic Engineering At Yonsei University

• Kim Dae-hwan

  School Of Electrical Engineering Kookmin University

• Kwon Hyuck-In

  School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756, Korea

• Kong Dongsik

  School of Electrical Engineering, Kookmin University, Seoul 136-702, Korea

• Kim Sungchul

  School of Electrical Engineering, Kookmin University, Seoul 136-702, Korea

• Jeon Young

  School of Electrical Engineering, Kookmin University, Seoul 136-702, Korea

• Kim Yongsik

  School of Electrical Engineering, Kookmin University, Seoul 136-702, Korea

• Kim Dong

  School of Electrical Engineering, Kookmin University, Seoul 136-702, Korea

• Kim Dae-Hwan

  School of Electrical Engineering, Kookmin University, Seoul 136-702, Korea

• Kim Dong

  School of Clinical Sciences, University of Bristol

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