Investigation of the Low-Frequency Noise Behavior and Its Correlation with the Subgap Density of States and Bias-Induced Instabilities in Amorphous InGaZnO Thin-Film Transistors with Various Oxygen Flow Rates

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概要

• 論文の詳細を見る

著者

• Kwon Hyuck-in

  School Of Eecs Kyungpook National University

• Park Sang-Hee

  Transparent Electronics Team, Electronics and Telecommunications Research Institute, 138 Gajeongno, Yuseong-gu, Daejeon 305-700, Korea

• Cho In-Tak

  School of Electrical Engineering and Computer Science, Kyungpook National University, 1370 Sankyuk-dong, Buk-gu, Daegu 702-701, Korea

• Song Sang-Hun

  School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756, Korea

• Jeong Chan-Yong

  School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756, Korea

• Lee Jong-Ho

  School of EECS and ISRC, Seoul National University, Seoul 151-742, Korea

• Park Ick-Joon

  School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756, Korea

• Cho Euo-Sik

  Department of Electronic Engineering, Gachon University, Gyeonggi-do 461-701, Korea

• Ryu Min

  Transparent Electronics Team, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea

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