Full-Swing InGaZnO Thin Film Transistor Inverter with Depletion Load
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概要
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A high performance amorphous indium–gallium–zinc oxide (a-IGZO) thin film transistor (TFT) inverter is implemented using the enhancement mode driver and the depletion mode load. The threshold voltage of the TFT is easily controlled by adjusting the active layer thickness in a-IGZO TFTs. The proposed inverter shows much improved switching characteristics including higher voltage gain, wider swing range, and higher noise margins compared to the conventional inverter with an enhancement load.
- 2009-10-25
著者
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Cho In-Tak
School of Electrical Engineering and Computer Science, Kyungpook National University, 1370 Sankyuk-dong, Buk-gu, Daegu 702-701, Korea
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Lee Jeong-Min
School of Electrical Engineering and Computer Science, Kyungpook National University, 1370 Sankyuk-dong, Buk-gu, Daegu 702-701, Korea
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Lee Jong-Ho
Department of Electrical Engineering, Seoul National University, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea
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Kwon Hyuck-In
Department of Electronic Engineering, Daegu University, Gyeongsan, Gyeongbuk 712-714, Korea
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