ED2000-83 / SDM2000-83 1/f noise in Schottky barrier structue

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概要

• 論文の詳細を見る

• We critically review and compare all the possible mechanisms for generation of low frequency noise in Schottky barrier structure, including mobility and diffusivity fluctuation, thermal activation and tunneling involving bulk traps and a new random walk model involving interface traps, and show how the noise measurement can be utilized to obtain useful information on bulk and / or interface traps and further diagnose the materials and certain process conditions for the fabrication of Schottky barrier structure.

• 社団法人電子情報通信学会の論文
• 2000-06-23

著者

• Kim D

  School Of Electrical Engineering Kookmin University

• Han Il

  Nano Device Research Center Kist

• Lee J.I.

  Photonics Research Center, KIST

• Han I.K.

  Photonics Research Center, KIST

• Kim H.J.

  Photonics Research Center, KIST

• Kim D.M.

  School of Electrical Engineering, Kookmin Univ.

• Brini J.

  LPCS UMR CNRS

• Chovet A.

  LPCS UMR CNRS

• Dimitriadis C.A.

  Dept.Physics, Univ.of Thessaloniki

• Chovet Alain

  IMEP(LPCS)

• Chovet A.

  Imep(lpcs)

• Kim H.j.

  Photonics Research Center Kist

• Lee J.i.

  On Leave At Basic S&t Program Kistep

• Kim D.m.

  School Of Electrical Engineering Kookmin Univ.

• Han I.k.

  Photonics Research Center Kist

• Dimitriadis C.a.

  Dept.physics Univ.of Thessaloniki

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