Electrical Properties of Yttrium–Indium–Zinc-Oxide Thin Film Transistors Fabricated Using the Sol–Gel Process and Various Yttrium Compositions
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概要
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This study was the first to investigate the fabrication of yttrium–indium–zinc-oxide (YIZO) thin film transistors (TFTs) using the sol–gel process. YIZO thin films were made using various yttrium (Y) compositions from 10 to 20%. Thermogravimetry and differential scanning calorimetry (TG–DSC) data from the 15% Y sample revealed that the YIZO thin films crystallized above the temperature of 535 °C, much hotter than that of indium–gallium–zinc-oxide (IGZO) thin films. The best performance of YIZO TFTs was observed with a 15% ratio of Y to Zn: this yielded a saturation mobility of 1.12 cm2 V-1 s-1, an on/off ratio of $4.61\times 10^{5}$, a threshold voltage of 0.54 V, and a subthreshold swing of 1.03 V/decade. This study also assessed the post-annealing temperature dependence of YIZO TFTs. The findings demonstrated the possibility of using Y to replace gallium (Ga), which has been used in previously reported solution-processed IGZO TFTs.
- 2010-03-25
著者
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Hyun Soo
School of Electrical and Electronic Engineering, Yonsei University, 262 Seongsanno, Seodaemoon-gu, Seoul 120-749, Korea
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Kim Gun
School of Electrical and Electronic Engineering, Yonsei University, 262 Seongsanno, Seodaemoon-gu, Seoul 120-749, Korea
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Gun Hee
School of Electrical and Electronic Engineering, Yonsei University, 262 Seongsanno, Seodaemoon-gu, Seoul 120-749, Korea
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Byung Du
LCD Business, Samsung Electronics Co., Ltd., San 24, Nongseo-dong, Yongin, Gyeonggi-do 449-711, Korea
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Shin Hyun
School of Chemical Engineering and Materials Science, Chung-Ang University, 221 Huksuk-dong, Dongjak-gu, Seoul 156-756, Korea
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Jeong Woong
School of Electrical and Electronic Engineering, Yonsei University, 262 Seongsanno, Seodaemoon-gu, Seoul 120-749, Korea
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Hyun Jae
School of Electrical and Electronic Engineering, Yonsei University, 262 Seongsanno, Seodaemoon-gu, Seoul 120-749, Korea
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