A Novel Amorphous InGaZnO Thin Film Transistor Structure without Source/Drain Layer Deposition

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In this paper, new structured amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) without conventional source/drain (S/D) layer deposition were introduced. The S/D layers were formed in a-IGZO channel layer by hydrogen (H2) plasma treatments. As the increased plasma treatment time, the resistivity of plasma treated a-IGZO as S/D decreased drastically from $10^{4}$ to $4.8 \times 10^{-3}$ $\Omega$ cm due to the carrier generation by plasma treatment for 240 s. The carrier concentration mechanism of the H2 plasma treated sample could be attributed to the preferential sputtering of oxygen by H2 bombardment due to formation of an oxygen vacancy and removal of adsorbed O2. The new proposed TFTs exhibited a field-effect mobility of 7.14 cm2 V-1 s-1, an on/off ratio of $7.95 \times 10^{6}$, a threshold voltage of 0.94 V, and a subthreshold swing of 1.06 V/decade. These results demonstrated the possibility of low cost TFT process because S/D electrode deposition was unnecessary.
2009-03-25