Influence of Pt-related deep traps formed in rectifier junctions on high-speed and Low-leakage properties (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

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We have investigated the properties of platinum-related deep traps presenting three energy levels inside the silicon band gap. Capacitance transient measurements were performed for rectifying diodes made of Au and Ni for Schottky and Al/Ti for ohmic contacts. Their electrical properties were characterized by I-V and C-V measurements while varying junction temperature up to 200℃. From the experimental results, we found that both the minority carrier lifetime and the leakage current were closely related to the status of the traps presenting at E_c-0.52eV. The drive-in process parameters for platinum were observed to result in substantial changes in deep trap distribution and consequently electrical properties. The precisely controlled devices with Pt drove-in presented the turn on voltage of 1.1 V and reverse recovery time of 20ns. We elucidated the influence of Pt-related deep traps into the pn multi/planar junction structures in conjunction with high-speed and low-leakage properties.
社団法人電子情報通信学会の論文
2007-06-18