Improved Strain-Free GaN Growth with a Nearly Lattice-Matched AlInN Interlayer by Metalorganic Chemical Vapor Deposition

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概要

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• Using metalorganic chemical vapor deposition, a strain-free GaN layer has been successfully grown by employing a 40-nm-thick nearly lattice-matched (NLM) Al1-xInxN as an interlayer. The Al1-xInxN interlayers having an InN molar fraction of $x\sim 0.11$ and 0.13 led to crack-networking at the GaN surface due to excessive tensile strain by lattice-mismatching. In the case of the GaN layer with a NLM Al1-xInxN interlayer ($x\sim 0.18$), however, strain-free GaN structure with improved structural and optical properties was demonstrated from the results of atomic force microscopy, Raman scattering and photoluminescence. By using transmission electron microscopy (TEM), the origin on strain-free state and improved properties of the GaN layer with the NLM AlInN interlayer was investigated. Based on TEM observations, we suggest that the faulted zone-like growth mechanism on roughed AlInN surface and partial compensation of tensile thermal stress are major factors on the improved strain-free GaN film.

• 2010-11-25

著者

• Lee Kang

  Semiconductor Research Center Memory Division Semiconductor Business Samsung Electronics Co.

• Lee Yong

  School Of Bioscience And Biotechnology And Institute Of Bioscience And Biotechnology Kangwon Nationa

• Oh Tae

  Department Of Information Media Engineering Myongji College

• Suh Eun-Kyung

  Department of Micro and Nanosciences, Aalto University, Micronova, PL 13500, 00076 Aalto, Finland

• Jeong Hyun

  School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Korea

• Kim Hun

  School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Korea

• Park Ah

  School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju 561-756, Korea

• Seo Tae

  School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju 561-756, Korea

• Kim Hun

  School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju 561-756, Korea

• Lee Kang

  Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Korea

• Lee Yong

  School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju 561-756, Korea

• Jeong Hyun

  School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju 561-756, Korea

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