Improved Light Extraction of GaN-Based Light-Emitting Diodes by an Ion-Damaged Current Blocking Layer
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概要
- 論文の詳細を見る
In this study we investigate an InGaN layer damaged by the bombardment of energetic oxygen ions that is placed beneath a p-electrode to act as a current blocking layer (CBL). This method not only increases light output power but also alleviates the current crowding problem. Our tests showed that the light output power was increased by 10% at 60 mA compared to conventional light-emitting diodes (LEDs). Additionally, our method improves LED productivity and effectiveness as it creates a nearly planar insulation layer through disordering or Ga sputtering of the InGaN surface and Ga2O3 formation.
- 2012-08-25
著者
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Kim Seung
School of Advanced Materials Engineering, Chonbuk National University, Chonju-si, Chonbuk 561-756, Korea
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Yang Gye
School of Semiconductor and Chemical Engineering and Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Korea
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Lee Keon
School of Semiconductor and Chemical Engineering and Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Korea
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Kang Ki
LG Innotek Co., Ltd., Gwangju 506-731, Korea
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Hong Gi
LG Innotek Co., Ltd., Gwangju 506-731, Korea
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Sun Woo
School of Semiconductor and Chemical Engineering and Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Korea
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