Interfacial Reaction between Aluminum Metal and Boron-Doped Polysilicon in a Planar Type Antifuse Device
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1998-05-01
著者
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Kim Y
Electronics And Telecommunications Res. Inst. (etri) Daejeon Kor
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Kim Youn
Semiconductor Technology Division Etri
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AHN Byung
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology
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Kim Youn
Semiconductor Technology Division Electronics And Telecommunication Research Institute
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Ahn Byung
Department Of Materials Science And Engineering Korea Advanced Institute Of Science And Technology
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PARK Hyung-Ho
Department of Ceramic Engineering, Yonsei University
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Song Y
Korea Inst. Machinery & Materials Taejon Kor
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Baek Jong
Semiconductor Technology Division Electronics And Telecommunications Research Institute
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Baek Jong
Semiconductor Division Electronics And Telecommunications Research Institute
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JUN Chi
Semiconductor Technology Division, Electronics and Telecommunication Research Institute
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SONG Yoon
Semiconductor Technology Division, Electronics and Telecommunication Research Institute
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KIM Jongdae
Semiconductor Technology Division, Electronics and Telecommunication Research Institute
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Kim Jongdae
Semiconductor Technology Division Electronics And Telecommunication Research Institute
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Park Hyung-ho
Department Of Ceramic Engineering Yonsei University
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Jun Chi
Semiconductor Technology Division Electronics And Telecommunication Research Institute
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Song Yoon
Semiconductor Technology Division Electronics And Telecommunication Research Institute
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Ahn Byung
Department Of Internal Medicine Hepatology Division Kangnam St. Mary's Hospital College Of Medi
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Baek Jong
Semiconductor Technology Division Electronics And Telecommunication Research Institute
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AHN Byung
Department of Decontamination and Decommissioning, Korea Atomic Energy Research Institute
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