Ferroelectric properties of direct-patternable La substituted Bi_4Ti_3O_<12> thin films formed by photochemical metal-organic deposition

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概要

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• The surface microstructure and ferroelectric properties of direct-patternable Bi4-xLaxTi3O12 (BLT) films prepared by photochemical metal-organic deposition as a function of La contents were characterized. The surface microstructure showed that La substitution (x = 0.75 and 1.00) to Bi4Ti3O12 films was effective to induce an improved microstructure of the BLT films without the formation of surface holes. The measured remnant polarization values of BLT films with x = 0, 0.25, 0.50, 0.75, and 1.00 were 3.7, 7.1, 11.3, 16.0, and 8.1 μC/cm2, respectively. After 109 cycles, the remaining remnant polarizations of Bi4-xLaxTi3O12 films with x = 0, 0.25, 0.50, 0.75, and 1.00 were 64.9, 69.5, 75.9, 94.8, and 95.0%, respectively. Considering the surface microstructure and ferroelectric properties of the BLT films, the BLT film with x = 0.75 showed the best microstructure and ferroelectric properties among all the BLT films. These results suggest the possible application of ferroelectric BLT film, relatively easily and without high cost process such as dry etching.

• 公益社団法人 日本セラミックス協会の論文
• 2009-05-01

著者

• Hill Ross

  4d Labs And Department Of Chemistry Simon Fraser University

• Park Hyung-ho

  Dep. Of Materials Sci. And Engineering Yonsei Univ.

• PARK Hyung-Ho

  Department of Ceramic Engineering, Yonsei University

• Hill Ross

  4d Labs And Dep. Of Chemistry Simon Fraser Univ.

• Lee Hong-sub

  Dep. Of Materials Sci. And Engineering Yonsei Univ.

• Lee Hong-Sub

  Department of Materials Science and Engineering, Yonsei University

• PARK Hyeong-Ho

  Department of Materials Science & Engineering, Yonsei University

• HWANG Yun

  Research & Development Division, Hynix Semiconductor Inc.

• Hwang Yun

  Research & Development Division Hynix Semiconductor Inc.

• Park Hyung-ho

  Department Of Ceramic Engineering Yonsei University

• Lee Hong-Sub

  Department of Materials Science & Engineering, Yonsei University

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