Electric and ferroelectric properties of a multilayer film of Nd2Ti2O7 and Bi3.25La0.75Ti3O12 for use as a ferroelectric field effect transistor

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概要

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• Ferroelectric materials are of interest due to their applications, such as in ferroelectric field effect transistor memory (FeFET). For this application, reducing retention time according to the leakage current is an important matter. Ferroelectric materials are able to be improved through multilayer fabrication of ferroelectric films. This study investigated multilayer ferroelectric thin films using strong candidate ferroelectric materials such as Bi3.25La0.75Ti3O12 (BLT) and Nd2Ti2O7 (NT). The ferroelectric materials were prepared with a stable interface using broad stoichiometry, without occurrence of a secondary phase or a disruption in stoichiometry. For the characterization of BLT, NT, and BLT/NT multilayer ferroelectric films, various analyses and measurements were carried out, including X-ray diffraction, X-ray photoelectron spectroscopy, current–voltage and polarization–voltage. The multilayer ferroelectric films showed improved ferroelectric properties using multilayer fabrication with a highly insulating ferroelectric film.

• 公益社団法人 日本セラミックス協会の論文

著者

• PARK Hyung-Ho

  Department of Ceramic Engineering, Yonsei University

• Lee Hong-sub

  Dep. Of Materials Sci. And Engineering Yonsei Univ.

• Lee Hong-Sub

  Department of Materials Science and Engineering, Yonsei University

• Choi Hye-Jung

  R & D Division, Hynix Semiconductor Inc.

• Chung Sung-Woong

  R & D Division, Hynix Semiconductor Inc.

• Park Hyung-ho

  Department Of Ceramic Engineering Yonsei University

• CHUNG Sung-Woong

  R & D Division, Hynix Semiconductor Inc.

• Lee Hong-Sub

  Department of Materials Science & Engineering, Yonsei University

• CHOI Hye-Jung

  R & D Division, Hynix Semiconductor Inc.

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