Effect of Gas Mixing Ratio on Etch Behavior of Y2O3 Thin Films in Cl2/Ar and BCl3/Ar Inductively Coupled Plasmas

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概要

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• This paper reports the results of a model-based analysis of the etch mechanism for the Y2O3 thin films in the Cl2/Ar and BCl3/Ar inductively coupled plasma. It was found that the BCl3/Ar plasma provides higher etch rate (except the case of pure BCl3 and Cl2 gases) as well as shows the non-monotonic dependence of the etch rate on the Ar mixing ratio. Plasma diagnostics by Langmuir probes indicated the noticeable influence of Ar mixing ratio on electron temperature and total density of positive ions. Using the model-based analysis of plasma chemistry and etch kinetics, it was demonstrated that the behavior of the Y2O3 etch rate in both gas mixtures generally corresponds to the neutral-flux-limited etch regime of the ion-assisted chemical reaction while the obtained differences cannot be explained assuming the Cl atoms to be the main chemically active species. Probably, in the BCl3-bases plasmas, the etch kinetics is significantly influenced by the BClx radicals.

• 2010-08-25

著者

• HONG MunPyo

  Department of Display and Semiconductor Physics, Korea University

• Park Hyung-ho

  Department Of Ceramic Engineering Yonsei University

• Kwon Kwang-ho

  Department Of Electronic Engineering Hanseo University

• Min Nam

  Department of Control and instrumentation Engineering, Korea University, Chungnam 339-700, Republic of Korea

• Min Nam

  Department of Biomicrosystem Technology, Korea University, Seoul 136-701, Korea

• Efremov Alexander

  Department of Electronic Devices and Materials Technology, State University of Chemistry and Technology, 153000 Ivanovo, Russia

• Kim Moonkeun

  Department of Control and Instrumentation Engineering, Korea University, Chungnam 339-700, Korea

• Baek Kyu-Ha

  Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea

• KWON Kwang-Ho

  Department of Control and Instrumentation Engineering, Korea University

• Kwon Kwang-Ho

  Department of Control and instrumentation Engineering, Korea University, Chungnam 339-700, Republic of Korea

• Hong Munpyo

  Department of Applied Physics, Korea University, Seoul 136-713, Korea

• Hong MunPyo

  Department of Display and Semiconductor Physics, Korea University, Chungnam 339-700, Republic of Korea

• Kim Moonkeun

  Department of Control and instrumentation Engineering, Korea University, Chungnam 339-700, Republic of Korea

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