Etching Behavior and Mechanism of In- and Ga-Doped ZnO Thin Films in Inductively Coupled BCl3/Cl2/Ar Plasmas

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概要

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• The etching characteristics and mechanism of In- and Ga-doped ZnO (IGZO) thin films in BCl3/Cl2/Ar inductively coupled plasma at a fixed gas pressure (6 mTorr) were investigated. It was found that the substitution of Cl2 for BCl3 in the BCl3/Cl2/Ar gas mixture results in the maximum IGZO etching rate in 40% BCl3 + 40% Cl2 + 20% Ar. In both Cl2-rich (20% BCl3 + 60% Cl2 + 20% Ar) and BCl3-rich (60% BCl3 + 20% Cl2 + 20% Ar) plasmas, increases in input power (500--800 W) and bias power (100--250 W) cause the monotonic acceleration of the IGZO etching process. Plasma diagnostics using Langmuir probes and zero-dimensional plasma modeling provided the data on plasma parameters and fluxes of active species. It was concluded that the IGZO etching process is not limited by the ion--surface interaction kinetics as well as involves BClx radicals.

• 2012-07-25

著者

• Kwon Kwang-ho

  Department Of Electronic Engineering Hanseo University

• Efremov Alexander

  Department of Electronic Devices and Materials Technology, State University of Chemistry and Technology, 153000 Ivanovo, Russia

• Kim Kwangsoo

  Department of Electronic Engineering, Sogang University, Seoul 121-742, Korea

• Kang Sungchil

  Department of Control and Instrumentation Engineering, Korea University, Yeongi, Chungnam 339-700, Korea

• Jang Hanbyeol

  Department of Control and Instrumentation Engineering, Korea University, Yeongi, Chungnam 339-700, Korea

• Yang Hyungjin

  Department of Physics, Korea University, Yeongi, Chungnam 339-700, Korea

• Kang Sungchil

  Department of Control and Instrumentation Engineering, Korea University, Jochiwon, Chungnam 339-700, Republic of Korea

• KWON Kwang-Ho

  Department of Control and Instrumentation Engineering, Korea University

• Kwon Kwang-Ho

  Department of Control and Instrumentation Engineering, Korea University, Yeongi, Chungnam 339-700, Korea

• KIM Kwangsoo

  Department of Electronic Engineering, Sogang University

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