Etching Characteristics and Mechanism of InP in Inductively Coupled HBr/Ar Plasma
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概要
- 論文の詳細を見る
Investigations of InP etch characteristics and mechanisms in HBr/Ar inductively coupled plasma were carried out. The etch rates of InP and the photoresist were measured as functions of HBr/Ar mixing ratio at fixed gas pressure (5 mTorr), input power (800 W), and bias power (200 W). Langmuir probe diagnostics and zero-dimensional (global) plasma modeling provided the information on plasma parameters, plasma composition, and fluxes of active species. It was found that, with variations in gas mixing ratio, the InP etch rate follows the changes in Br atom density and flux, but shows opposite behavior of the changes in H atoms and positive ions. These findings allow one to conclude that, under a given set of input process parameters, the InP etch process is not limited by the ion-surface interaction kinetics and that Br atoms are the main chemically active species.
- 2008-08-25
著者
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Kwon Kwang-ho
Department Of Electronic Engineering Hanseo University
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Lee Hyun
Department Of Anesthesia And Pain Medicine School Of Medicine Pusan National University
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Min Nam-Ki
Department of Control and Instrumentation Engineering, Korea University, Chungnam 339-700, Korea
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Min Nam-Ki
Department of Biomicrosystem, Korea University, Seoul 136-713, Republic of Korea
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Efremov Alexander
Department of Electronic Devices and Materials Technology, State University of Chemistry and Technology, 153000 Ivanovo, Russia
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Lee Chi-Woo
Department of Advanced Material Chemistry, Korea University, Chungnam 339-700, Korea
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Lee Hyun
Department of Computer and Applied Physics, Hanseo University, Chungnam 356-706, Korea
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Kim Mansu
Department of Control and Instrumentation Engineering, Korea University, Chungnam 339-700, Korea
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KWON Kwang-Ho
Department of Control and Instrumentation Engineering, Korea University
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Kwon Kwang-Ho
Department of Control and Instrumentation Engineering, Korea University, Chungnam 339-700, Korea
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