Etching Characteristics and Mechanisms of Pb(Zr,Ti)O3, Pt, and SiO2 in an Inductively Coupled HBr/Cl2 Plasma

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概要

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• An investigation of the etching characteristics of Pb(Zr,Ti)O3 (PZT), Pt, and SiO2 in an inductively coupled HBr/Cl2 plasma as functions of gas mixing ratio at constant total gas pressure (6 mTorr), gas flow rate (40 sccm), input power (700 W), and bias power (300 W) was carried out. It was found that the PZT etching rate exhibits a maximum of 23.8 nm/min at 60% Cl2, while the highest PZT/SiO2 and PZT/Pt etching selectivities correspond to 20 and 40--60% Cl2, respectively. Plasma diagnostics by a double Langmuir probe and a global (zero-dimensional) plasma model provided the data on plasma parameters, densities and fluxes of plasma active species. It was considered that the PZT etching process appears in the neutral-flux-limited or transitional regime of an ion-assisted chemical reaction, and the nonmonotonic behavior of the PZT etch rate may result from the change in reaction probability.

• 2011-06-25

著者

• Lee Chi-woo

  Department Of Chemistry College Of Natural Sciences Korea University

• Kwon Kwang-ho

  Department Of Electronic Engineering Hanseo University

• Efremov Alexander

  Department of Electronic Devices and Materials Technology, State University of Chemistry and Technology, 7 F. Engels St., 153000 Ivanovo, Russia

• Efremov Alexander

  Department of Electronic Devices and Materials Technology, State University of Chemistry and Technology, 153000 Ivanovo, Russia

• Kim Kwangsoo

  Department of Sogang Institute of Advanced Technology (SIAT), Sogang University, Seoul 121-742, Korea

• Kim Youngkeun

  Department of Control and Instrumentation Engineering, Korea University, Jochiwon, Chungnam 339-700, Korea

• Kim Kwangsoo

  Department of Sogang Institute of Advanced Technology, Sogang University, Seoul 121-742, Korea

• Kim Kwangsoo

  Department of Electronic Engineering, Sogang University, Seoul 121-742, Korea

• Lee Chi-Woo

  Department of Advanced Material Chemistry, Korea University, Chungnam 339-700, Korea

• Lee Chi-Woo

  Department of Advanced Material Chemistry, Korea University, Jochiwon, Chungnam 339-700, Korea

• KWON Kwang-Ho

  Department of Control and Instrumentation Engineering, Korea University

• Kwon Kwang-Ho

  Department of Control and Instrumentation Engineering, Korea University, Jochiwon, Chungnam 339-700, Korea

• KIM Kwangsoo

  Department of Electronic Engineering, Sogang University

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