Etching Characteristics of In2O3 and SnO2 Thin Films in an Inductively Coupled HBr/Ar Plasma: Effects of Gas Mixing Ratio and Bias Power
スポンサーリンク
概要
- 論文の詳細を見る
An investigation of the etching characteristics and mechanisms of both In2O3 and SnO2 in a HBr/Ar inductively coupled plasma was carried out. The etching rates were measured in the range of 0–100% Ar and 100–300 W bias power at a fixed gas flow rate (40 sccm), total gas pressure (6 mTorr), and input power (700 W). The plasma parameters and composition were determined using a combination of plasma diagnostics by a double Langmuir probe and a global (zero-dimensional) plasma model. It was found that both In2O3 and SnO2 etching rates are mainly controlled by the Br atom flux, with some sensitivity to the ion energy flux corresponding to the transitional regimes of the ion-assisted chemical reaction.
- 2010-03-25
著者
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Kwon Kwang-ho
Department Of Electronic Engineering Hanseo University
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Nam Ki
Department Of Animal Physiology Faculty Of Agriculture Tohoku University
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Nam Ki
Department of Control and Instrumentation Engineering, Korea University, Chungnam 339-700, Korea
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Alexander Efremov
Department of Electronic Devices and Materials Technology, State University of Chemistry and Technology, 7 F. Engels St., 153000 Ivanovo, Russia
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Eftremov Alexander
Department of Electronic Devices and Materials Technology, State University of Chemistry and Technology, 7 F. Engels St., 153000 Ivanovo, Russia
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Kim Moonkeun
Department of Control and Instrumentation Engineering, Korea University, Chungnam 339-700, Korea
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Jaehwa Jeong
Department of Control and Instrumentation Engineering, Korea University, Chungnam 339-700, Korea
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Kwangsoo Kim
Department of Sogang Institute of Advanced Technology, Sogang University, Seoul 121-742, Korea
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KWON Kwang-Ho
Department of Control and Instrumentation Engineering, Korea University
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Kwang-Ho Kwon
Department of Control and Instrumentation Engineering, Korea University, Chungnam 339-700, Korea
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