Etching Characteristics of VO2 Thin Films Using Inductively Coupled Cl2/Ar Plasma
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概要
- 論文の詳細を見る
A study on both etching characteristics and mechanism of VO2 thin films in the Cl2/Ar inductively coupled plasma was carried. The variable parameters were gas pressure (4–10 mTorr) and input power (400–700 W) at fixed bias power of 150 W and initial mixture composition of 25% Cl2 + 75% Ar. It was found that an increase in both gas pressure and input power results in increasing VO2 etch rate while the etch selectivity over photoresist keeps a near to constant values. Plasma diagnostics by Langmuir probes and zero-dimensional plasma model provided the data on plasma parameters, steady-state densities and fluxes of active species on the etched surface. The model-based analysis of the etch mechanism showed that, for the given ranges of operating conditions, the VO2 etch kinetics corresponds to the transitional regime of ion-assisted chemical reaction and is influenced by both neutral and ion fluxes with a higher sensitivity to the neutral flux.
- 2009-08-25
著者
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Kwon Kwang-ho
Department Of Electronic Engineering Hanseo University
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MIN Nam-Ki
Department of Control and Instrumentation Engineering, Korea University
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Lee Hyun
Department Of Anesthesia And Pain Medicine School Of Medicine Pusan National University
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Yun Sun
Electronic and Telecommunications Research Institute, Daejon 305-350, Korea
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Yun Sun
Electronics and Telecommunications Research Institute, 161 Gajung-dong, Yusong-gu, Daejon 305-350, Korea
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Ham Yong-Hyun
Department of Control and Instrumentation Engineering, Korea University, Chungnam 339-700, Korea
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Efremov Alexander
Department of Electronic Devices and Materials Technology, State University of Chemistry and Technology, 7 F. Engels St., 153000 Ivanovo, Russia
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Min Nam-Ki
Department of Biomicrosystem, Korea University, Seoul 136-713, Republic of Korea
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Efremov Alexander
Department of Electronic Devices and Materials Technology, State University of Chemistry and Technology, 153000 Ivanovo, Russia
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Lee Hyun
Department of Electronic, Computer, and Communication Engineering, Hanseo University, Chungnam 356-706, Korea
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KWON Kwang-Ho
Department of Control and Instrumentation Engineering, Korea University
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Kwon Kwang-Ho
Department of Control and Instrumentation Engineering, Korea University, Chungnam 339-700, Korea
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