Kinetics of Chemical Changes in Phenol Formaldehyde Based Polymeric Films Etched in N2O and O2 Inductively Coupled Plasmas: A Comparative Study
スポンサーリンク
概要
- 論文の詳細を見る
This paper reports on investigation of surface chemistry and etch rates of phenol formaldehyde based polymer after N2O and O2 radio frequency (RF) inductively coupled plasma processing depend on exposure time. By using X-ray photoelectron spectroscopy, it was shown that oxygen and nitrogen oxide plasma expositions both lead to similar changes in the chemical composition of polymer. The nitrogen oxide plasma does not lead to any significant increase of concentration of nitrogen-containing groups on the polymer. It was confirmed that the mechanism of photoresist destruction in the N2O discharge was generally identical to that in the O2 plasma. Furthermore, the surface interactions with the polymer of nitrogen-containing active species could be neglected.
- 2009-08-25
著者
-
Kwon Kwang-ho
Department Of Electronic Engineering Hanseo University
-
Min Nam-Ki
Department of Control and Instrumentation Engineering, Korea University, Jochiwon, Chungnam 339-700, Republic of Korea
-
Min Nam-Ki
Department of Biomicrosystem, Korea University, Seoul 136-713, Republic of Korea
-
Baek Kyu-Ha
IT Convergence and Components Laboratory, ETRI, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-700, Republic of Korea
-
Kang Seung-Youl
IT Convergence and Components Laboratory, ETRI, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-700, Republic of Korea
-
Shutov Dmitriy
Department of Electronic Devices and Materials Technology, Ivanovo State University of Chemistry and Technology, 7 F. Engels st., 153000 Ivanovo, Russia
-
Suh Kyung
IT Convergence and Components Laboratory, ETRI, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-700, Republic of Korea
-
KWON Kwang-Ho
Department of Control and Instrumentation Engineering, Korea University
関連論文
- Recovery of Silicon Surface after Reactive Ion Etching of SiO_2 using CHF_3/C_2F_6 Plasma
- Size effect of substitutional alkaline-earth elements on the electrical and structural properties of LaMnO3 films
- Energy Level Structure of Amorphous Silicon Carbide
- Infrared-Cut Filter : Optics and Quantum Electronics
- Etching Characteristics and Mechanism of ZnO and Ga-Doped ZnO Thin Films in Inductively Coupled HBr/Ar/CHF3 Plasma
- Etching Characteristics of In2O3 and SnO2 Thin Films in an Inductively Coupled HBr/Ar Plasma: Effects of Gas Mixing Ratio and Bias Power
- Micromachining of Multilayer Thin Films for High-Speed Humidity Sensor Fabrication
- Etching Characteristics of VO2 Thin Films Using Inductively Coupled Cl2/Ar Plasma
- Kinetics of Chemical Changes in Phenol Formaldehyde Based Polymeric Films Etched in N2O and O2 Inductively Coupled Plasmas: A Comparative Study
- Effect of Gas Mixing Ratio on Etch Behavior of Y2O3 Thin Films in Cl2/Ar and BCl3/Ar Inductively Coupled Plasmas
- Etching Characteristics and Mechanism of InP in Inductively Coupled HBr/Ar Plasma
- Device Characteristics of Pentacene Dual-Gate Organic Thin-Film Transistor
- Etching Characteristics of Manganese-Doped Zinc Sulfide Film Using Cl2/CF4 Inductively Coupled Plasma
- Etching Characteristics and Mechanisms of Pb(Zr,Ti)O3, Pt, and SiO2 in an Inductively Coupled HBr/Cl2 Plasma
- Etching Characteristics and Mechanisms of TiO2 Thin Films in HBr/Cl2/Ar Inductively Coupled Plasma
- Etching Behavior and Mechanism of In- and Ga-Doped ZnO Thin Films in Inductively Coupled BCl3/Cl2/Ar Plasmas
- Influence of Ar and NH3 Plasma Treatment on Surface of Poly(monochloro-para-xylylene) Dielectric Films Processed in Oxygen Plasma
- Poly(ethylene glycol)-Functionalized Photocurable Silsesquioxane as an Antibiofouling Material for Nanostructure-Based Biomedical Applications
- A Multimode Relayed Piezoelectric Cantilever for Effective Vibration Energy Harvesting
- Effect of reflector bias voltage on the nanocrystallization of silicon thin films by reactive particle beam assisted chemical vapor deposition