Characteristics of MOCVD-Cu Films Using Direct Liquid Injection and the Effects of Post-annealing
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概要
- 論文の詳細を見る
Copper metalorganic chemical vapor deposition (MOCVD) using a direct liquid injection system for the (hfac)Cu(VTMOS) [1,1,1,5,5,5-hexafluoro-2, 4-pentadionato(vinyltrimethoxysilane)copper(I)] precursor, has been performed onto TiN, p-type <100> Si, and Si_3N_4 substrates. The influences of reaction temperature and the substrate type on the growth rate, the microstructure, and the electrical resistivity of the copper film have been discussed. To clarify the effects of post-annealing on the characteristics of MOCVD-Cu films, rapid thermal processing (RTP) of Cu/TiN/Si structures has been explored. The electrical and the microstructural characteristics of Cu on reactive sputtered TiN have been studied by observing the changes before and after RTP treatment.
- 社団法人電子情報通信学会の論文
- 1997-07-24
著者
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Kim Youn
Semiconductor Technology Division Etri
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Kim Youn
Semiconductor Technology Division Electronics And Telecommunication Research Institute
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Yoo H
Electronics And Telecommunications Res. Inst. Taejon Kor
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Yoo Hyung
Semiconductor Tehnology Division, Electronics and Telecommunications Research Institute
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Baek J
Electronics And Telecommunication Res. Inst. Taejon Kor
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Yoo Hyung
Semiconductor Tehnology Division Electronics And Telecommunications Research Institute
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Yoo Hyung
Semiconductor Division Etri
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Baek Jong
Semiconductor Technology Division Electronics And Telecommunications Research Institute
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Baek Jong
Semiconductor Division Electronics And Telecommunications Research Institute
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Jun Chi-Hoon
Semiconductor Technology Division, ETRI
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Jun Chi-hoon
Semiconductor Technology Division Etri
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