DEGRADATION MECHANISM OF ELECTRON EMISSION CHARACTERISTICS IN SILICON FIELD EMITTERS
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概要
- 論文の詳細を見る
Degradation of electron emission characteristics in silicon field emitters and its mechanism have been studied. The silicon field emitters with a triode type were fabricated by using a chemical-mechanical-polishing process. There exists a critical biasing time, t_c, at which the anode current starts to be degraded predominantly. The t_c is shortened as the anode current increases. Also, the emission current repeatedly measured within t_c with a complete relaxation after each measurement would not be degraded even though the total biasing time exceeded the critical time. The experimental results indicate that the degradation in silicon field emitters mainly originates from thermal instability of the Si tip due to Nottingham heating.
- 社団法人電子情報通信学会の論文
- 1997-02-14
著者
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Lee J
Micro-electronics Tech. Lab. Electronics And Telecommunications Research Institute
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Yoo H
Electronics And Telecommunications Res. Inst. Taejon Kor
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Yoo Hyung
Semiconductor Tehnology Division Electronics And Telecommunications Research Institute
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Yoo Hyung
Semiconductor Division Etri
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Song Yoon-Ho
Semiconductor Division, Electronics and Telecommunications Research Institute
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Kim Yong-Min
Department of Physics, Chungnam National University
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O Sung
Department of Physics, Chungnam National University
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Lee Jin
Semiconductor Division, Electronics and Telecommunications Research Institute
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Cho Kyoung
Semiconductor Division, Electronics and Telecommunications Research Institute
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Yoo Hyurig
Semiconductor Division, Electronics and Telecommunications Research Institute
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Song Y‐h
Micro-electronics Tech. Lab. Electronics And Telecommunications Research Institute
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Cho Kyoung
Micro-electronics Tech. Lab. Electronics And Telecommunications Research Institute
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Kim Yong-min
Department Of Physics Chungnam National University
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Kim Yong-min
Department Of Biological Engineering Inha University
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