Pd-Ge-Au Based Hybrid Ohmic Contacts to High-Low Doped GaAs Field-Effect Transistor

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-09-15

著者

• Baik H

  Yonsei Univ. Seoul Kor

• Baik Hong

  Department Of Metallurgical Engineering Yonsei University

• LEE Jong-Lam

  Department of Materials Science and Engineering, Pohang University of Science of Technology (POSTECH

• KWAK Joon

  Department of Metallurgical Engineering, Yonsei University

• Kwak J

  Hanyang Univ. Seoul Kor

• Lee J‐l

  Pohang Univ. Sci. And Technol. (postech) Pohang Kor

• Lee Jong-lam

  Institute Of Materials Science University Of Tsukuba:(present Address)electronics And Telecommunicat

• Lee Jong-lam

  Department Of Materials Science And Engineering Pohang University Of Science And Technology (postech

• Baik Hong

  Department Of Materials Engineering College Of Engineering Yonsei University

• Kwak Joon

  Department of Materials Science and Metallurgical Engineering, Sunchon National University, Chonnam 540-742, Korea

• Baik Hong

  Department of Advanced Materials Engineering, Yonsei University, Seoul 120-749, Korea

関連論文

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• Effect of Penetration Depth on Electrical Properties in Pd/Ge/Ti/Au Ohmic Contact to High-Low-Doped n-GaAs

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