In-situ Determination of Interface Dipole Energy between Tris(8-hydroxyquinoline) Aluminum and MgO Coated Al in Inverted Top-Emitting Organic Light-Emitting Diodes
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概要
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The interface dipole energies between tris(8-hydroxyquinoline) aluminum (Alq3) and Al/MgO (or bare Al) were in-situ measured using synchrotron radiation photoemission spectroscopy. The work function of Al/MgO is higher by 0.6 eV than that of Al. The interface dipole energies were determined to be -0.3 and 0.2 eV for Al/MgO and bare Al, respectively. Therefore, the barrier height of Al/MgO is higher by 0.3 eV than that of Al. The operating voltage at a current density of 50 mA/cm2 of inverted top-emitting organic light-emitting diode (ITOLED) using Al/MgO cathode decreased from 14.3 to 11.7 V, and the luminance value at the current density of 222 mA/cm2 of ITOLED increased from 1830 to 1950 cd/m2. Therefore, it is considered that MgO interfacial layer played a role in reducing the effective barrier height of electron injection by tunneling mechanism, leading to a reduction in turn-on voltage and luminance enhancement.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2011-10-25
著者
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Lee Jong-lam
Department Of Materials Science And Engineering Pohang University Of Science And Technology (postech
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Hong Kihyon
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk 790-784, Korea
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Kim Soo
School of Chemical Engineering and Materials Science, Chung-Ang University, Seoul 156-756, Korea
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Lee Jong-Lam
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk 790-784, Korea
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