Low-Temperature, Solution-Processed Zinc Tin Oxide Thin-Film Transistors Fabricated by Thermal Annealing and Microwave Irradiation
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概要
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In this study, we fabricated zinc tin oxide (ZTO) thin-film transistors (TFTs) using a sol--gel solution at a low annealing temperature of 350 °C. We found that the combination of conventional hot plate annealing and microwave irradiation was effective for achieving high performance of ZTO-TFTs. Solution-processed ZTO-TFTs prepared at 350 °C by microwave irradiation showed enhanced device characteristics of 1.84 cm2 V-1 s-1 mobility and a 10^{6} on/off current ratio. X-ray photoelectron spectroscopy analyses confirmed that residual hydroxyls in solution-processed ZTO films can be decomposed at low temperatures by microwave irradiation. Low-temperature microwave-assisted processing makes ZTO TFTs promising for use in flexible, transparent electronics.
- 2012-04-25
著者
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Song Kie
Department Of Applied Physics Konkuk University
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Park Jee
Department of Advanced Materials Engineering, Yonsei University, Seoul 120-749, Republic of Korea
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Baik Hong
Department of Advanced Materials Engineering, Yonsei University, Seoul 120-749, Korea
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Baik Hong
Department of Advanced Materials Engineering, Yonsei University, Seoul 120-749, Republic of Korea
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Lee Se
Department of Advanced Materials Engineering, Kyungsung University, 314-79 Daeyun-dong, Nam-gu, Busan 680-736, Korea
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Yoo Young
Department of Advanced Materials Engineering, Yonsei University, Seoul 120-749, Republic of Korea
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Song Kie
Department of Applied Physics, Konkuk University, 322 Danwol-dong, Chungju-si, Chungcheongbuk-do 380-701, Korea
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Song Kie
Department of Applied Physics, Konkuk University, Chungju, Chungbuk 380-701, Korea
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