AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor using Pd/Ge Ohmic Contact
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-03-01
著者
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Lee Byung-teak
Department Of Materials Science And Engineering Chonnam National University
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Kim Yi-tae
Department Of Materials Science And Engineering Pohang University Of Science Of Technology (postech)
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LEE Jong-Lam
Department of Materials Science and Engineering, Pohang University of Science of Technology (POSTECH
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OH Jung-Woo
Department of Materials Science and Engineering, Pohang University of Science of Technology (POSTECH
関連論文
- AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor using Pd/Ge Ohmic Contact
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- Device Characteristics of AlGaN/GaN MIS-HFET Using Al_2O_3-HfO_2 Laminated High-k Dielectric
- Pd-Ge-Au Based Hybrid Ohmic Contacts to High-Low Doped GaAs Field-Effect Transistor
- Effects of Pt/Pd Co-Doping on the Sensitivity of SnO_2 Thin Film Sensors : Surfaces, Interfaces, and Files
- Heteroepitaxial Growth of GaAs on (100) GaAs and InP by Selective Liquid Phase Epitaxy
- AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor using Pd/Ge Ohmic Contact