Kim Haecheon | Semiconductor Technology Division Etri
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概要
関連著者
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Shin Dong
Department Of Agricultural Chemistry The University Of Tokyo
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Kim Haecheon
Semiconductor Technology Division Etri
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Lee Jong-lam
Department Of Materials Science And Engineering Pohang University Of Science And Technology (postech
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Park Chan
Department Of Anatomy College Of Medicine Kyung Hee University
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Kwak Joon
Department of Materials Science and Metallurgical Engineering, Sunchon National University, Chonnam 540-742, Korea
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Baik Hong
Department of Advanced Materials Engineering, Yonsei University, Seoul 120-749, Korea
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Shin Dong
Department of Anatomy, Ajou University School of Medicine
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Baik H
Yonsei Univ. Seoul Kor
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Baik Hong
Department Of Metallurgical Engineering Yonsei University
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LEE Jong-Lam
Department of Materials Science and Engineering, Pohang University of Science of Technology (POSTECH
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PARK Chan
Department of Anatomy, College of Medicine, Kyung Hee University
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KWAK Joon
Department of Metallurgical Engineering, Yonsei University
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Kwak J
Hanyang Univ. Seoul Kor
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Lee J‐l
Pohang Univ. Sci. And Technol. (postech) Pohang Kor
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Park C
Pohang Univ. Sci. And Technol. Pohang Kor
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Lee Jong-lam
Institute Of Materials Science University Of Tsukuba:(present Address)electronics And Telecommunicat
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Shin Dong
Department Of Materials Science And Engineering Postech
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Baik Hong
Department Of Materials Engineering College Of Engineering Yonsei University
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Baik Hong
Department of Metallurgical Engineering, Yonsei University, Seoul 120-749, Korea
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Lee Jong-Lam
Department of Materials Science and Engineering, POSTECH, Pohang 790-784, Korea
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Kwak Joon
Department of Metallurgical Engineering, Yonsei University, Seoul 120-749, Korea
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Kim Haecheon
Semiconductor Technology Division, ETRI, Deajon 305-606, Korea
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Shin Dong
Department of Materials Science and Engineering, POSTECH, Pohang 790-784, Korea
著作論文
- Effect of Penetration Depth on Electrical Properties in Pd/Ge/Ti/Au Ohmic Contact to High-Low-Doped n-GaAs
- Effect of Penetration Depth on Electrical Properties in Pd/Ge/Ti/Au Ohmic Contact to High-Low-Doped n-GaAs