Accurate Extraction of Excess Channel Thermal Noise Coefficient in Berkeley Short-Channel Insulated Gate Field-Effect Transistor Model 4
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概要
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In this paper, the channel thermal noise coefficient of Berkeley short-channel insulated gate field-effect transistor (IGFET) model 4 (BSIM4) is accurately extracted. To extract the noise coefficient of BSIM4, accurate channel thermal noise model was derived, which takes into account velocity saturation, channel length modulation, and carrier heating effects. Simplified short channel thermal noise model becomes a similar form with BSIM’s channel thermal noise model which is based on the long-channel theory. From this result we presented the methodology for extraction of the channel thermal noise coefficient. We show the extracted noise coefficient of nanoscale RF metal–oxide–semiconductor field-effect transistor (MOSFET) with $L_{\text{eff}} = 21$ nm.
- 2009-04-25
著者
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Jeon Jongwook
Inter-university Semiconductor Research Center (isrc) And School Of Ee Seoul National University
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Shin Hyungcheol
Inter-university Semiconductor Research Center (isrc)
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Park Chan
Department Of Anatomy College Of Medicine Kyung Hee University
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Lee Jaehong
Inter-University Semiconductor Research Center (ISRC), School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Korea
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Park Byung-Gook
Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea
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Park Chan
Department of Electrical and Computer Engineering, Kwangwoon University, Gwangwoon-gil 26, Nowon-gu, Seoul 139-701, Korea
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Lee Hyunwoo
System LSI Division, Samsung Electronics, San #24 Nongseo-ri, Giheung-eup, Yongin, Gyeonggi-do 449-711, Korea
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Oh Hansu
System LSI Division, Samsung Electronics, San #24 Nongseo-ri, Giheung-eup, Yongin, Gyeonggi-do 449-711, Korea
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Kang Ho-Kyu
System LSI Division, Samsung Electronics, San #24 Nongseo-ri, Giheung-eup, Yongin, Gyeonggi-do 449-711, Korea
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Park Byung-Gook
Inter-University Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
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Lee Jaehong
Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Korea
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