16GHz CMOS LNA design without Source degeneration inductor (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
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概要
- 論文の詳細を見る
A Ku-band CMOS low noise amplifier (LNA) without source degeneration inductor have been designed in a 0.18μm CMOS process. Design procedure and simulation results are presented in this paper. This makes the design easy and straightforward. Without source degeneration inductor technique is used as the input and proper noise matching, which increases the overall gain and decrease noise figure in Ku-band. With a 1.4V supply, the LNA achieve gain of 9.47dB, noise figure of 4.08 dB and input third-order intercept points (IIP3) of +7.54dBm respectively. The LNA exhibits 8.96 mA of current and achieves 12.54mW of power dissipation.
- 社団法人電子情報通信学会の論文
- 2005-06-21
著者
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Shin Hyungcheol
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Sci
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Jhon Hee
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering Seoul Nat
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Oh Tae
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering Seoul Nat
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Choi Seung
Inter-University Semiconductor Research Center (ISRC), and School of Electrical Engineering, Seoul N
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Shin Hyungcheol
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Compu
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Shin Hyungcheol
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering Seoul Nat
-
Choi Seung
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering Seoul Nat
-
Oh Tae
Inter-university Semiconductor Research Center (isrc)
-
Choi Seung
Inter-university Semiconductor Research Center (isrc)
-
Jhon Hee
Inter-university Semiconductor Research Center (isrc)
-
Shin Hyungcheol
Inter-university Semiconductor Research Center (isrc)
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