Program/Erase Model of Nitride-Based NAND-Type Charge Trap Flash Memories
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概要
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In this paper, we present a detailed study of the physical dynamics of the program/erase (P/E) operations in nitride-based NAND-type charge trapping silicon–oxide–nitride–oxide–silicon (SONOS) flash memories. By calculating the internal oxide fields, tunneling currents, and trapping charges, we evaluated the simple charge trapping mechanism. We calculated transient P/E threshold voltage ($V_{\text{T}}$) shift considering the ONO fields and tunneling currents. All the parameters were obtained using totally physics-based equations with no fitting parameters or optimization steps. The results show conventional NAND SONOS flash memory P/E characteristics in the Fowler–Nordheim (FN) operation regime. Also, these P/E simulation results agree with the measurement data of $30\times 70$ nm2 ($L\times W$) SONOS flash memory devices that have 2.3/12/4.5 and 3/9/7 nm ONO stack layers. This model fully accounts for the $V_{\text{T}}$ shift as a function of the applied gate voltage, transient time, and thicknesses of silicon oxide and silicon nitride layers, which can be used for optimizing the ONO thicknesses and the parameters for improving performance.
- 2010-08-25
著者
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LEE Jung
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Compu
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CHO Seongjae
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Compu
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PARK Byung-Gook
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Compu
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Lee Gil
Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci
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Kim Wandong
Inter-university Semiconductor Research Center
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Yun Jang-gn
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Compu
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Kim Yoon
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Compu
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Shin Hyungcheol
Inter-university Semiconductor Research Center (isrc)
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Park Se
Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering And Computer Science Seoul National University
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SHIM Won
Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National University
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Kim Doo-Hyun
Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea
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Shin Hyungcheol
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea
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Li Dong
Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea
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Park Byung-Gook
Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea
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Lee Gil
Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea
-
Lee Gil
Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea
-
Park Byung-Gook
Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea
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Shim Won
Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea
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Park Se
Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea
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Yun Jang-Gn
Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea
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Lee Jung
Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea
-
Lee Jung
Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea
-
Cho Seongjae
Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea
-
Cho Seongjae
Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea
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Kim Yoon
Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Republic of Korea
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Park Byung-Gook
Inter-University Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea
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