Analytical Modeling of Realistic Single-Electron Transistors Based on Metal-Oxide-Semiconductor Structure with a Unique Distribution Function in the Coulomb-Blockade Oscillation Region

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-04-30

著者

• PARK Byung-Gook

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Compu

• Kim K

  Seoul National Univ. Seoul Kor

• LEE Jong

  Inter-University Semiconductor Research Center, Seoul National University

• KIM Dae

  Inter-University Semiconductor Research Center and School of Electrical Engineering, Seoul National

• KIM Kyung

  Inter-University Semiconductor Research Center, Seoul National University

• Kim D

  Inter-university Semiconductor Research Center School Of Electrical Engineering Seoul National Unive

• Kim Dae

  Inter-university Semiconductor Research Center School Of Electrical Engineering Seoul National Unive

• Song Ki-whan

  Inter-university Semiconductor Research Center School Of Electrical Engineering Seoul National Unive

• KIM Hyun

  Inter-University Semiconductor Research Center, School of Electrical Engineering, Seoul Nat'l Univ.

• HUH Jung

  Inter-University Semiconductor Research Center, School of Electrical Engineering, Seoul Nat'l Univ.

• BAEK Gwanghyeon

  Inter-University Semiconductor Research Center, School of Electrical Engineering, Seoul National Uni

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