Junction Leakage Characteristics of Shallow Trench Isolation (STI) with Nitrogen Pile-Up Sidewall Oxide(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)

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概要

• 論文の詳細を見る

• In spite of the several advantages of shallow trench isolation (STI) compared with local oxidation of silicon (LOCOS), higher junction leakage current induced by mechanical stress imposes the limitation to the scaled device. In this paper, we have proposed the shallow trench isolation with nitrogen pile-up sidewall oxide and analyzed its junction leakage characteristics. In the case of nitrogen dose of 5.0x10^<14>cm^<-2>, good junction leakage characteristics could be obtained. For the detection of process-related bulk traps, deep level transient spectroscopy (DLTS) measurement was performed.

• 社団法人電子情報通信学会の論文
• 2003-06-23

著者

• PARK Byung-Gook

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Compu

• CHOI Woo

  Inter-University Semiconductor Research Center, Seoul National University

• CHOI Byung

  Inter-University Semiconductor Research Center, Seoul National University

• LEE Jong

  Inter-University Semiconductor Research Center, Seoul National University

• Choi B

  Seoul National Univ. Seoul Kor

• Choi W

  Inter-university Semiconductor Research Center Seoul National University

• Choi Woo

  Inter-university Semiconductor Research Center Seoul National University

• Lee J

  Inter-university Semiconductor Research Center And School Of Electrical Engineering And Computer Sci

• Lee Myeong

  Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering Seoul Nat

• Woo Dong-soo

  Inter-university Semiconductor Research Center Seoul National University

• Kang In

  Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering Seoul Nat

• Lee Jong

  Inter-univ. Semicon. Res. Center Seoul Nat. Univ.

• Woo Dong-soo

  Inter-university Semiconductor Research Center (isrc) And School Of Electrical Engineering Seoul Nat

• Choi Byung

  Inter-university Semiconductor Research Center And School Of Electrical Engineering Seoul National U

• Park Byung-Gook

  Inter-University Semiconductor Research Center (ISRC) and School of Electrical and Computer Science, Seoul National University, San 56-1, Sillim-dong, Gwanak-ku, Seoul 151-742, Republic of Korea

• Choi Woo

  Inter-university Semiconductor Research Center and School of Electrical Engineering, Seoul National University, ENG 420-016, Sillim-dong, Gwank-gu, Seoul 151-722, Korea

• Park Byung-Gook

  Inter-University Semiconductor Research Center (ISRC) and Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Republic of Korea

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